MMBT3904FW
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
FEATURES
SOT-523
Min
A
L
·
·
Epitaxial Planar Die Construction
Dim
A
B
C
D
G
H
J
Max
Complementary PNP Type Available
1.500 1.700
0.750 0.850
0.700 0.900
0.250 0.350
0.900 1.100
0.000 0.100
0.100 0.200
0.220 0.500
0.400 0.600
1.500 1.700
0.200 0.400
(MMBT3906FW)
·
Ideal for Medium Power Amplification and
Switching
S
C
Top View
B
COLLECTOR
3
V
G
3
1
1
2
BASE
K
L
H
J
D
K
SOT-523
2
S
EMITTER
V
MAXIMUM RATINGS
Rating
All Dimension in mm
Symbol
Value
40
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
60
Vdc
6.0
Vdc
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
I
200
mAdc
C
Symbol
Max
Unit
(1)
Total Device Dissipation FR–5 Board
P
D
200
mW
T
= 25°C
A
Derate above 25°C
Thermal Resistance Junction to Ambient
(2)
1.6
600
300
mW/°C
°C/W
mW
(1)
(2)
R
JA
D
Total Device Dissipation
(2)
P
Alumina Substrate,
Derate above 25°C
T = 25°C
A
2.4
400
mW/°C
°C/W
°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
JA
T , T
J stg
–55 to +150
MMBT3904FW = 1N, AM
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (3)
V
V
40
60
6.0
—
—
—
—
50
50
Vdc
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = 10 Adc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
Vdc
(BR)EBO
E
C
Base Cutoff Current
(V = 30 Vdc, V
I
nAdc
nAdc
BL
= 3.0 Vdc)
= 3.0 Vdc)
EB
CE
Collector Cutoff Current
(V = 30 Vdc, V
EB
I
—
CEX
CE
1. FR–4 = Minimum Pad
2. Alumina = 1.0
1.0 Inch Pad.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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