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MMBT3904FW PDF预览

MMBT3904FW

更新时间: 2024-01-19 23:32:23
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
6页 180K
描述
General Purpose Transistor

MMBT3904FW 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.58
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MMBT3904FW 数据手册

 浏览型号MMBT3904FW的Datasheet PDF文件第2页浏览型号MMBT3904FW的Datasheet PDF文件第3页浏览型号MMBT3904FW的Datasheet PDF文件第4页浏览型号MMBT3904FW的Datasheet PDF文件第5页浏览型号MMBT3904FW的Datasheet PDF文件第6页 
MMBT3904FW  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
RoHS Compliant Product  
FEATURES  
SOT-523  
Min  
A
L
·
·
Epitaxial Planar Die Construction  
Dim  
A
B
C
D
G
H
J
Max  
Complementary PNP Type Available  
1.500 1.700  
0.750 0.850  
0.700 0.900  
0.250 0.350  
0.900 1.100  
0.000 0.100  
0.100 0.200  
0.220 0.500  
0.400 0.600  
1.500 1.700  
0.200 0.400  
(MMBT3906FW)  
·
Ideal for Medium Power Amplification and  
Switching  
S
C
Top View  
B
COLLECTOR  
3
V
G
3
1
1
2
BASE  
K
L
H
J
D
K
SOT-523  
2
S
EMITTER  
V
MAXIMUM RATINGS  
Rating  
All Dimension in mm  
Symbol  
Value  
40  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
60  
Vdc  
6.0  
Vdc  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
200  
mAdc  
C
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
D
200  
mW  
T
= 25°C  
A
Derate above 25°C  
Thermal Resistance Junction to Ambient  
(2)  
1.6  
600  
300  
mW/°C  
°C/W  
mW  
(1)  
(2)  
R
JA  
D
Total Device Dissipation  
(2)  
P
Alumina Substrate,  
Derate above 25°C  
T = 25°C  
A
2.4  
400  
mW/°C  
°C/W  
°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
MMBT3904FW = 1N, AM  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage (3)  
V
V
40  
60  
6.0  
50  
50  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Base Cutoff Current  
(V = 30 Vdc, V  
I
nAdc  
nAdc  
BL  
= 3.0 Vdc)  
= 3.0 Vdc)  
EB  
CE  
Collector Cutoff Current  
(V = 30 Vdc, V  
EB  
I
CEX  
CE  
1. FR4 = Minimum Pad  
2. Alumina = 1.0  
1.0 Inch Pad.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 6  

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