Datasheet > BC808

BC808

更新时间： 2024-01-26 21:25:49

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管
页数	文件大小	规格书
3页	818K
描述
-0.8A , -30V PNP Plastic Encapsulated Transistor

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技术参数
数据手册

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BC808 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.65	Is Samacsys：	N
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	100	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
标称过渡频率 (fT)：	80 MHz	Base Number Matches：	1

BC808 数据手册

BC808

-0.8A , -30V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE

SOT-23

ꢀ

Suitable for AF-Driver stages and low power output stages

Complementary to BC818

ꢀ

Top View

C B

CLASSIFICATION OF h_FE(1)

Product-Rank

BC808-16

100~250

BC808-25

BC808-40

250~630

Range

160~400

Marking Code

Millimeter

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

Min.

0.09

0.45

0.08

Max.

0.18

0.60

0.177

2.80

2.10

1.20

0.89

1.78

0.30

PACKAGE INFORMATION

0.6 REF.

0.89

1.02

Package

MPQ

Leader Size

7 inch

SOT-23

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

Ratings

Unit

V_CBO

V_CEO

V_EBO

I_C

-30

-25

-5

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

-800

300

°C

P_C

T_J, T_STG

150, -65 ~ 150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

I_C= -100µA, I_E=0

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-30

-25

I_C= -10mA, I_B=0

-5

I_E= -100µA, I_C=0

-0.1

630

µA

V_CB= -25V, I_E=0

Emitter Cut-Off Current

I_EBO

V_EB= -4V, I_C=0

h_{FE (1)}

h_{FE (2)}

V_CE(sat)

V_BE

100

V_CE= -1V, I_C= -100mA

V_CE= -1V, I_C= -300mA

I_C= -500mA, I_B= -50mA

V_CE= -1V, I_C= -300mA

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

-0.7

-1.2

f_T

100

MHz V_CE= -5V, I_C= -10mA, f=50MH

pF CB= -10V, I =0, f=1MH

Collector output capacitance

C_ob

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Jul-2011 Rev. A

Page 1 of 3

12 3

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