THYRISTOR MODULE
(
)
PD,PE,KK
PK
40F
UL:E76102（M）
Power Thyristor/Diode Module PK40F series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package
and electrically isolated mounting base make your mechanical design easy.
92
20
17.5
20
20
2-
6
●
T(AV)
I
T(RMS)
40A, I
TSM
62A, I
1300A
● di/dt 150 A/μs
● dv/dt 500V/μs
2.8
�
M5X10
K2
G2
K2
G2
#110TAB
3
2
1
（Applications）
K1G1
（A2）�
（K2）�
3
2
1
A1K2
K1
（K2）�
（A2）�
A1K2
Various rectifiers
PK
PE
AC/DC motor drives
Heater controls
Light dimmers
80±0.2
K2
2
K2
G2
3
2
1
1
1
K1G1
（A2）�
（K2）�
K1G1
（A2）�
A1K2
（A1）�
Static switches
PD
KK
Unit：
A
■Maximum Ratings
Ratings
PK40F40
PD40F40
PE40F40
KK40F40
PK40F80
PD40F80
PE40F80
KK40F80
PK40F120
PD40F120
PE40F120
PK40F160
PD40F160
PE40F160
KK40F160
Symbol
Item
Unit
KK40F120
VRRM
VRSM
VDRM
400
480
400
800
960
800
1200
1300
1200
1600
1700
1600
V
V
V
＊
＊
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Symbol
T（AV）
I
Item
Conditions
Ratings
40
Unit
A
＊Average On-State Current
＊R.M.S. On-State Current
＊Surge On-State Current
Single phase, half wave, 180°conduction, Tc：96℃
Single phase, half wave, 180°conduction, Tc：96℃
／cycle, 50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
T（RMS）
I
62
A
1
TSM
I
A
1200 1300
/
2
2
2
2
I t
7200
A S
＊I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
A
G（AV）
P
3
FGM
I
3
10
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
V
RGM
V
5
V
1
G
D
DRM
G
150
di／dt
I ＝100mA，Tj＝25℃，V ＝
／
V
，dI dt＝0.1A μs
A μs
/
/
/
2
ISO
V
A.C.1minute
2500
V
℃
℃
＊
＊
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Tj
－40 to ＋125
－40 to ＋125
2.7（28）
2.7（28）
170
Tstg
＊Storage Temperature
Mounting（M5） Recommended Value 1.5-2.5（15-25）
Terminal（M5） Recommended Value 1.5-2.5（15-25）
Mounting
Torque
N･ｍ
（㎏f･B）
g
Mass
■Electrical Characteristics
Symbol
DRM
I
Item
Conditions
at V , single phase, half wave, Tj＝125℃
Ratings
15
Unit
mA
mA
V
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
DRM
RRM
I
DRM
15
＊
＊
at V , single phase, half wave, Tj＝125℃
TM
V
1.40
On-State Current 120A, Tj＝25℃ Inst. measurement
GT
GT
T
D
I ／V
Tj＝25℃，I ＝1A，V ＝6V
70 3
mA V
/
/
1
GD
V
D
DRM
0.25
10
V
Tj＝125℃，V ＝／V
I ＝40A，I ＝100mA，Tj＝25℃，V ＝
Tj＝125℃, V ＝／V , Exponential wave.
2
1
tgt
T
G
D
DRM
G
／
V
，dI dt＝0.1A μs
μs
/
/
2
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
500
50
dv／dt
V μs
/
3
H
I
mA
mA
Tj＝25℃
Tj＝25℃
Junction to case
L
I
Lutching Current, typ.
100
0.55
Rth（j-c）＊Thermal Impedance, max.
℃ W
/
＊mark：Thyristor and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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