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M366S1623DT0-C1L PDF预览

M366S1623DT0-C1L

更新时间: 2024-02-17 09:18:10
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路动态存储器PC
页数 文件大小 规格书
9页 139K
描述
PC100 Unbuffered DIMM

M366S1623DT0-C1L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIMM包装说明:,
针数:168Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.32
风险等级:5.92Is Samacsys:N
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-XDMA-N168
内存密度:1073741824 bit内存集成电路类型:SYNCHRONOUS DRAM MODULE
内存宽度:64功能数量:1
端口数量:1端子数量:168
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX64
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

M366S1623DT0-C1L 数据手册

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M366S1623DT0  
PC100 Unbuffered DIMM  
M366S1623DT0 SDRAM DIMM  
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD  
GENERAL DESCRIPTION  
FEATURE  
The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous  
Dynamic RAM high density memory module. The Samsung  
M366S1623DT0 consists of sixteen CMOS 8M x 8 bit with 4banks  
Synchronous DRAMs in TSOP-II 400mil package and a 2K  
EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy  
substrate. Two 0.1uF decoupling capacitors are mounted on the  
printed circuit board in parallel for each SDRAM.  
• Performance range  
Part No.  
Max Freq. (Speed)  
125MHz (8ns @ CL=3)  
100MHz (10ns @ CL=2)  
100MHz (10ns @ CL=3)  
M366S1623DT0-C80  
M366S1623DT0-C1H  
M366S1623DT0-C1L  
• Burst mode operation  
• Auto & self refresh capability (4096 Cycles/64ms)  
• LVTTL compatible inputs and outputs  
• Single 3.3V ± 0.3V power supply  
• MRS cycle with address key programs  
Latency (Access from column address)  
Burst length (1, 2, 4, 8 & Full page)  
Data scramble (Sequential & Interleave)  
• All inputs are sampled at the positive going edge of the  
system clock  
The M366S1623DT0 is a Dual In-line Memory Module and is  
intended for mounting into 168-pin edge connector sockets.  
Synchronous design allows precise cycle control with the use of  
system clock. I/O transactions are possible on every clock cycle.  
Range of operating frequencies, programmable latencies allows  
the same device to be useful for a variety of high bandwidth, high  
performance memory system applications.  
• Serial presence detect with EEPROM  
• PCB : Height (1,375mil) , double sided component  
PIN CONFIGURATIONS (Front side/back side)  
PIN NAMES  
Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back  
Pin Name  
A0 ~ A11  
Function  
Address input (Multiplexed)  
Select bank  
57  
58  
59  
60  
61  
62  
1
2
3
4
5
6
7
8
9
VSS  
29 DQM1  
DQ18 85  
DQ19 86 DQ32 114 CS1 142 DQ51  
87 DQ33 115 RAS 143 VDD  
DQ20 88 DQ34 116 VSS 144 DQ52  
VSS 113 DQM5 141 DQ50  
BA0 ~ BA1  
DQ0 ~ DQ63  
DQ0 30  
DQ1 31  
DQ2 32  
DQ3 33  
CS0  
DU  
VSS  
A0  
Data input/output  
VDD  
CLK0 ~ CLK3 Clock input  
NC  
*VREF 90  
89 DQ35 117  
VDD 118  
A1  
A3  
A5  
A7  
A9  
145 NC  
146 *VREF  
147 NC  
148 VSS  
149 DQ53  
CKE0 ~ CKE1 Clock enable input  
VDD  
34  
A2  
CS0 ~ CS3  
RAS  
Chip select input  
Row address strobe  
Column address strobe  
Write enable  
DQ4 35  
DQ5 36  
DQ6 37  
A4  
A6  
A8  
63 CKE1 91 DQ36 119  
64  
65  
66  
VSS  
92 DQ37 120  
DQ21 93 DQ38 121  
CAS  
10 DQ7 38 A10/AP  
DQ22 94 DQ39 122 BA0 150 DQ54  
WE  
11 DQ8 39  
12 40  
13 DQ9 41  
BA1  
VDD  
VDD  
67 DQ23 95 DQ40 123 A11 151 DQ55  
DQM0 ~ 7  
VDD  
DQM  
68  
69  
70  
VSS  
VSS  
96  
VSS 124 VDD 152 VSS  
DQ24 97 DQ41 125 CLK1 153 DQ56  
DQ25 98 DQ42 126 *A12 154 DQ57  
Power supply (3.3V)  
Ground  
14 DQ10 42 CLK0  
VSS  
15 DQ11 43  
16 DQ12 44  
17 DQ13 45  
VSS  
DU  
CS2  
71 DQ26 99 DQ43 127 VSS 155 DQ58  
*VREF  
SDA  
Power supply for reference  
Serial data I/O  
Serial clock  
72  
73  
74  
DQ27 100 DQ44 128 CKE0 156 DQ59  
VDD 101 DQ45 129 CS3 157 VDD  
DQ28 102 VDD 130 DQM6 158 DQ60  
18  
VDD  
46 DQM2  
SCL  
19 DQ14 47 DQM3 75 DQ29 103 DQ46 131 DQM7 159 DQ61  
SA0 ~ 2  
WP  
Address in EEPROM  
Write protection  
Don¢t use  
76  
77  
78  
20 DQ15 48  
21 *CB0 49  
22 *CB1 50  
DU  
VDD  
NC  
DQ30 104 DQ47 132 *A13 160 DQ62  
DQ31 105 *CB4 133 VDD 161 DQ63  
VSS 106 *CB5 134 NC  
162 VSS  
163 CLK3  
DU  
23  
24  
25  
26  
27  
VSS  
NC  
NC  
VDD  
WE  
51  
52  
53  
54  
NC  
79 CLK2 107 VSS 135 NC  
NC  
No connection  
80  
81  
82  
*CB2  
*CB3  
VSS  
NC  
108 NC  
136 *CB6 164 NC  
137 *CB7 165 **SA0  
WP 109 NC  
*
These pins are not used in this module.  
** These pins should be NC in the system  
**SDA 110 VDD 138 VSS 166 **SA1  
55 DQ16 83 **SCL 111 CAS 139 DQ48 167 **SA2  
84  
which does not support SPD.  
28 DQM0 56 DQ17  
VDD 112 DQM4 140 DQ49 168 VDD  
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.  
Rev. 0.0 Jun. 1999  

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