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K6F1616R6C-FF70 PDF预览

K6F1616R6C-FF70

更新时间: 2024-01-07 22:41:24
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器
页数 文件大小 规格书
9页 154K
描述
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1616R6C-FF70 技术参数

生命周期:Obsolete包装说明:FBGA, BGA48,6X8,30
Reach Compliance Code:unknown风险等级:5.82
Is Samacsys:N最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
内存密度:16777216 bit内存集成电路类型:STANDARD SRAM
内存宽度:16端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL电源:1.8 V
认证状态:Not Qualified最小待机电流:1 V
子类别:SRAMs最大压摆率:0.022 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOMBase Number Matches:1

K6F1616R6C-FF70 数据手册

 浏览型号K6F1616R6C-FF70的Datasheet PDF文件第2页浏览型号K6F1616R6C-FF70的Datasheet PDF文件第3页浏览型号K6F1616R6C-FF70的Datasheet PDF文件第4页浏览型号K6F1616R6C-FF70的Datasheet PDF文件第5页浏览型号K6F1616R6C-FF70的Datasheet PDF文件第6页浏览型号K6F1616R6C-FF70的Datasheet PDF文件第7页 
K6F1616R6C Family  
CMOS SRAM  
Document Title  
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
November 17, 2003 Preliminary  
0.1  
Revised  
November 21, 2003 Preliminary  
- Changed ball name of E3 (Vss) & H6 (DNU) to NC.  
- Deleted 85ns Speed bin.  
1.0  
Finalize  
May 24, 2004  
Final  
- Deleted 55ns Speed bin.  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 1.0  
May 2004  

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