Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RFUS20TM4SFH
Series
Dimensions (Unit : mm)
Structure
+0.3
−0.1
+0.3
−0.1
Ultra Fast Recovery
+0.2
−0.1
(1) (2) (3)
Applications
General rectification
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
+0.1
−0.05
Construction
Silicon epitaxial planer
Absolute maximum ratings (Tc=25C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Conditions
Limits
430
Unit
V
Symbol
VRM
Duty0.5
Direct voltage
430
V
VR
60Hz half sin wave, Resistance load,
Average rectified forward current
Forward current surge peak
Io
20
A
A
Tc=68C
60Hz half sin wave, Non-repetitive
IFSM
100
one cycle peak value, Tj=25 C
Junction temperature
Storage temperature
150
Tj
C
C
55 to 150
Tstg
Electrical characteristics (Tj=25C)
Parameter
Conditions
IF=20A
Min.
Typ.
1.4
0.05
24
Max.
1.6
10
Symbol
VF
Unit
V
-
-
-
-
Forward voltage
Reverse current
VR=430V
IR
μA
Reverse recovery time
Thermal resistance
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
35
trr
ns
-
2
Rth(j-c)
C/W
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2011.06 - Rev.A
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