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RFUS20TM4SFH PDF预览

RFUS20TM4SFH

更新时间: 2024-01-09 21:46:21
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罗姆 - ROHM /
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RFUS20TM4SFH 数据手册

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Data Sheet  
AEC-Q101 Qualified  
Super Fast Recovery Diode  
RFUS20TM4SFH  
Series  
Dimensions (Unit : mm)  
Structure  
+0.3  
0.1  
+0.3  
0.1  
Ultra Fast Recovery  
+0.2  
0.1  
(1) (2) (3)  
Applications  
General rectification  
Features  
1)Ultra low switching loss  
2)High current overload capacity  
3)Cathode common single type  
+0.1  
0.05  
Construction  
Silicon epitaxial planer  
Absolute maximum ratings (Tc=25C)  
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Conditions  
Limits  
430  
Unit  
V
Symbol  
VRM  
Duty0.5  
Direct voltage  
430  
V
VR  
60Hz half sin wave, Resistance load,  
Average rectified forward current  
Forward current surge peak  
Io  
20  
A
A
Tc=68C  
60Hz half sin wave, Non-repetitive  
IFSM  
100  
one cycle peak value, Tj=25 C  
Junction temperature  
Storage temperature  
150  
Tj  
C  
C  
55 to 150  
Tstg  
Electrical characteristics (Tj=25C)  
Parameter  
Conditions  
IF=20A  
Min.  
Typ.  
1.4  
0.05  
24  
Max.  
1.6  
10  
Symbol  
VF  
Unit  
V
-
-
-
-
Forward voltage  
Reverse current  
VR=430V  
IR  
μA  
Reverse recovery time  
Thermal resistance  
IF=0.5A,IR=1A,Irr=0.25×IR  
junction to case  
35  
trr  
ns  
-
2
Rth(j-c)  
C/W  
www.rohm.com  
2011.06 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/3  

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