5秒后页面跳转
BR25H010FVT-2CE2 PDF预览

BR25H010FVT-2CE2

更新时间: 2024-02-20 03:30:35
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
35页 1445K
描述
EEPROM, 128X8, Serial, CMOS, PDSO8, TSSOP-8

BR25H010FVT-2CE2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP-8Reach Compliance Code:compliant
Factory Lead Time:15 weeks风险等级:1.71
其他特性:ALSO OPERATES AT 2.5V WITH 5MHZ最大时钟频率 (fCLK):10 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8长度:4.4 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.2 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:EEPROMs最大压摆率:0.004 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mm最长写入周期时间 (tWC):4 ms
写保护:HARDWAREBase Number Matches:1

BR25H010FVT-2CE2 数据手册

 浏览型号BR25H010FVT-2CE2的Datasheet PDF文件第2页浏览型号BR25H010FVT-2CE2的Datasheet PDF文件第3页浏览型号BR25H010FVT-2CE2的Datasheet PDF文件第4页浏览型号BR25H010FVT-2CE2的Datasheet PDF文件第5页浏览型号BR25H010FVT-2CE2的Datasheet PDF文件第6页浏览型号BR25H010FVT-2CE2的Datasheet PDF文件第7页 
Datasheet  
Serial EEPROM Series Automotive EEPROM  
125Operation SPI BUS EEPROM  
BR25H010-2C  
General Description  
BR25H010-2C is a serial EEPROM of SPI BUS interface method.  
Features  
High speed clock action up to 10MHz (Max.)  
Wait function by HOLDB terminal.  
Part or whole of memory arrays settable as read only  
memory area by program.  
MSOP8, TSSOP-B8, SOP8, SOP-J8 Package  
Data at shipment Memory array: FFh, status register  
BP1, BP0 : 0  
More than 100 years data retention.  
More than 1 million write cycles.  
AEC-Q100 Qualified.  
2.5V to 5.5V single power source action most  
suitable  
for battery use.  
Page write mode useful for initial value write at  
factory shipment.  
Package  
For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)  
Self-timed programming cycle.  
Low Supply Current  
At write operation (5V)  
At read operation (5V)  
At standby operation (5V)  
: 1.0mA (Typ.)  
: 1.0mA (Typ.)  
: 0.1μA (Typ.)  
Address auto increment function at read operation  
Prevention of write mistake  
Write prohibition at power on.  
MSOP8  
TSSOP-B8  
Write prohibition by command code (WRDI).  
Write prohibition by WPB pin.  
2.90mm x 4.00mm x 0.90mm  
3.00mm x 6.40mm x 1.20mm  
Write prohibition block setting by status registers  
(BP1, BP0).  
Prevention of write mistake at low voltage.  
SOP8  
SOP-J8  
5.00mm x 6.20mm x 1.71mm  
4.90mm x 6.00mm x 1.65mm  
Page write  
Number of pages  
16 Byte  
Product Number  
BR25H010-2C  
BR25H010-2C  
Capacity  
1Kbit  
Bit format  
128x8  
Product Number  
BR25H010-2C  
Supply Voltage  
2.5V to 5.5V  
MSOP8  
TSSOP-B8  
SOP8  
SOP-J8  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
©2013 ROHM Co., Ltd. All rights reserved.  
TSZ2211114001  
TSZ02201-0R1R0G100070-1-2  
27.Jan.2016 Rev.002  
1/32  

与BR25H010FVT-2CE2相关器件

型号 品牌 描述 获取价格 数据表
BR25H010FVT-5AC ROHM BR25H010xxx-5AC系列是支持SPI BUS接口的1KBit串行EEPROM。

获取价格

BR25H010FVT-WE2 ROHM EEPROM, 128X8, Serial, CMOS, PDSO8, LEAD FREE, TSSOP-8

获取价格

BR25H010FV-WE2 ROHM EEPROM, 128X8, Serial, CMOS, PDSO8, LEAD FREE, SSOP-8

获取价格

BR25H010F-W ROHM HIGH GRADE Specification HIGH RELIABILITY ser

获取价格

BR25H010F-WC ROHM EEPROM, 128X8, Serial, CMOS, PDSO8, ROHS COMPLIANT, SOP-8

获取价格

BR25H010F-WCE2 ROHM EEPROM, 128X8, Serial, CMOS, PDSO8, SOP-8

获取价格