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BR25H010FV-WE2 PDF预览

BR25H010FV-WE2

更新时间: 2024-01-13 16:40:05
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
17页 1138K
描述
EEPROM, 128X8, Serial, CMOS, PDSO8, LEAD FREE, SSOP-8

BR25H010FV-WE2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:LEAD FREE, SSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.57
最大时钟频率 (fCLK):5 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e3/e2长度:4.4 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.25 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:TIN/TIN COPPER端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:10宽度:3 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

BR25H010FV-WE2 数据手册

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TECHNICAL NOTE  
HIGH GRADE Specification HIGH RELIABILITY series  
SPI BUS Serial EEPROMs  
Supply voltage 1.8V~5.5V  
Operating temperature –40°C~+85°C type  
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W  
Description  
BR25L†††-W series is a serial EEPROM of SPI BUS interface method.  
Features  
y High speed clock action up to 5MHz (Max.)  
y Wait function by HOLD terminal  
y Part or whole of memory arrays settable as read only memory area by program  
y 1.8 ~ 5.5V single power source action most suitable for battery use  
y Page write mode useful for initial value write at factory shipment  
y Highly reliable connection by Au pad and Au wire  
y For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)  
y Auto erase and auto end function at data rewrite  
y Low current consumption  
At write action (5V)  
At read action (5V)  
At standby action (5V) : 0.1µA (Typ.)  
: 1.5mA (Typ.)  
: 1.0mA (Typ.)  
Page write  
Number of  
pages  
y Address auto increment function at read action  
y Write mistake prevention function  
16 Byte  
32 Byte  
BR25L080-W  
BR25L160-W  
BR25L320-W  
BR25L640-W  
Write prohibition at power on  
Write prohibition by command code (WRDI)  
Write prohibition by WP pin  
BR25L010-W  
BR25L020-W  
BR25L040-W  
Product  
number  
Write prohibition block setting by status registers (BP1, BP0)  
Write mistake prevention function at low voltage  
y SOP8, SOP-J8, SSOP-B8, TSSOP-B8, MSOP8 TSSOP-B8J package *1 *2  
y DataꢀatꢀshipmentꢀꢀMemoryꢀarrayꢀ:ꢀFFh,ꢀstatusꢀregisterꢀWPEN,ꢀBP1,ꢀBP0ꢀ:ꢀ0  
y Data kept for 40 years  
y Data rewrite up to 1,000,000 times  
*1 BR25L080/160-W : SOP8, SOP-J8, SSOP-B8, TSSOP-B8  
*2 BR25L320/640-W : SOP8, SOP-J8  
BR25L series  
Power source  
Capacity  
1Kbit  
Bit format  
128 × 8  
256 × 8  
512 × 8  
1K × 8  
Type  
SOP8  
SOP-J8  
SSOP-B8  
TSSOP-B8  
MSOP8  
TSSOP-B8J  
voltage  
BR25L010-W  
BR25L020-W  
BR25L040-W  
BR25L080-W  
1.8 ~ 5.5V  
2Kbit  
1.8 ~ 5.5V  
1.8 ~ 5.5V  
1.8 ~ 5.5V  
4Kbit  
8Kbit  
16Kbit  
32Kbit  
64Kbit  
2K × 8  
4K × 8  
8K × 8  
BR25L160-W  
BR25L320-W  
BR25L640-W  
1.8 ~ 5.5V  
1.8 ~ 5.5V  
1.8 ~ 5.5V  
Ver.B Oct.2005  

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