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1N4448HC PDF预览

1N4448HC

更新时间: 2024-01-10 16:32:50
品牌 Logo 应用领域
TAITRON 二极管开关
页数 文件大小 规格书
4页 122K
描述
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon,

1N4448HC 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.58配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

1N4448HC 数据手册

 浏览型号1N4448HC的Datasheet PDF文件第2页浏览型号1N4448HC的Datasheet PDF文件第3页浏览型号1N4448HC的Datasheet PDF文件第4页 
January 2007  
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448  
Small Signal Diode  
LL-34 COLOR BAND MARKING  
DEVICE 1ST BAND 2ND BAND  
FDLL914  
BLACK  
BLACK  
BROWN  
BLACK  
BLACK  
BROWN  
BLACK  
BROWN  
BROWN  
GRAY  
FDLL914A  
FDLL914B  
FDLL916  
FDLL916A  
FDLL916B  
FDLL4148  
FDLL4448  
BLACK  
RED  
WHITE  
BROWN  
BROWN  
BLACK  
LL-34  
DO-35  
THE PLACEMENT OF THE EXPANSION GAP  
HAS NO RELATIONSHIP TO THE LOCATION  
OF THE CATHODE TERMINAL  
Cathode is denoted with a black band  
-1st band denotes cathode terminal  
and has wider width  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
DC Forward Current  
Value  
Units  
VRRM  
100  
200  
300  
400  
V
IO  
mA  
mA  
mA  
IF  
if  
Recurrent Peak Forward Current  
IFSM  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
TSTG  
TJ  
Storage Temperature Range  
-65 to + 175  
-65 to + 175  
°C  
°C  
Operating Junction Tempera  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Max.  
Symbol  
Parameter  
Units  
1N/FDLL 914/A/B / 4148 / 4448  
PD  
RθJA  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
500  
300  
mW  
°C/W  
©2007 Fairchild Semiconductor Corporation  
1
www.fairchildsemi.com  
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2  

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