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RO2113 PDF预览

RO2113

更新时间: 2024-01-11 07:35:02
品牌 Logo 应用领域
RFM 晶体谐振器
页数 文件大小 规格书
2页 262K
描述
314.5 MHz SAW Resonator

RO2113 技术参数

生命周期:Obsolete包装说明:ROHS COMPLIANT, CERAMIC, CASE SM-2, 4 PIN
Reach Compliance Code:unknown风险等级:5.83
Is Samacsys:N晶体/谐振器类型:1-PORT
频率容差 (MHz):0.075插入损耗:1.5 dB
JESD-609代码:e4安装特点:SURFACE MOUNT
标称工作频率:314.5 MHz并联电容:3.25 pF
物理尺寸:L5.99XB3.99XH2.29 (mm)/L0.236XB0.157XH0.09 (inch)表面贴装:YES
端子面层:GOLDBase Number Matches:1

RO2113 数据手册

 浏览型号RO2113的Datasheet PDF文件第2页 
®
RO2113  
Ideal for LO in 315 MHz Superhet Receivers with 500 kHz IF  
Very Low Series Resistance  
Quartz Stability  
314.5 MHz  
SAW  
Rugged, Hermetic, Low-Profile TO39 Case  
Pb  
Complies with Directive 2002/95/EC (RoHS)  
Resonator  
The RO2113 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It pro-  
vides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at  
approximately 314.5 MHz. The RO2113 is designed for IC based 315 MHz superhet receivers using a  
500 kHz IF (Philips UAA3201T). Applications include wireless remote-control and security devices operating  
in the USA under FCC Part 15 and in Canada under DoC RSS-210.  
Absolute Maximum Ratings  
Rating  
Value  
+0  
Units  
dBm  
VDC  
°C  
CW RF Power Dissipation (See: Typical Test Circuit)  
DC Voltage Between Any Two Pins  
Case Temperature  
(Observe ESD Precautions)  
±30  
TO39-3 Case  
-40 to +85  
Electrical Characteristics  
Characteristic  
Sym  
Notes  
Minimum  
Typical  
Maximum  
Units  
Center Frequency (+25 °C)  
Absolute Frequency  
f
314.425  
314.575  
MHz  
kHz  
dB  
C
2, 3, 4, 5  
Tolerance from 314.500 MHz  
Df  
±75  
1.5  
C
Insertion Loss  
Quality Factor  
IL  
1.0  
14,200  
1,600  
25  
2, 5, 6  
5, 6, 7  
Unloaded Q  
Q
U
50 W Loaded Q  
Q
L
Temperature Stability  
Turnover Temperature  
Turnover Frequency  
T
f
10  
1.0  
2.9  
40  
°C  
O
f
6, 7, 8  
O
c
2
Frequency Temperature Coefficient  
Absolute Value during the First Year  
FTC  
0.037  
ppm/°C  
Frequency Aging  
|f |  
£10  
ppm/yr  
MW  
W
1
5
A
DC Insulation Resistance between Any Two Pins  
RF Equivalent RLC Model  
Motional Resistance  
R
L
12  
90.1991  
2.83921  
3.2  
19  
M
Motional Inductance  
µH  
5, 7, 9  
M
Motional Capacitance  
C
fF  
M
O
Pin 1 to Pin 2 Static Capacitance  
Transducer Static Capacitance  
C
5, 6, 9  
5, 6, 7, 9  
2, 7  
3.5  
pF  
C
2.9  
pF  
P
Test Fixture Shunt Inductance  
L
80  
nH  
TEST  
Lid Symbolization (in Addition to Lot and/or Date Codes)  
RFM RO2113  
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.  
Notes:  
1. Frequency aging is the change in fC with time and is specified at +65°C or less.  
7. Derived mathematically from one or more of the following directly measured  
parameters: fC, IL, 3 dB bandwidth, fC versus TC, and CO.  
8. Turnover temperature, TO, is the temperature of maximum (or turnover) fre-  
quency, fO. The nominal frequency at any case temperature, TC, may be calcu-  
lated from: f = fO [1 - FTC (TO -TC)2]. Typically, oscillator TO is 20°C less than  
the specified resonator TO.  
9. This equivalent RLC model approximates resonator performance near the reso-  
nant frequency and is provided for reference only. The capacitance CO is the  
Aging may exceed the specification for prolonged temperatures above +65°C.  
Typically, aging is greatest the first year after manufacture, decreasing signifi-  
cantly in subsequent years.  
2. The center frequency, fC, is measured at the minimum insertion loss point, ILMIN  
,
with the resonator in the 50 W test system (VSWR £ 1.2:1). The shunt induc-  
tance, LTEST, is tuned for parallel resonance with CO at fC. Typically, fOSCILLA-  
TOR or fTRANSMITTER is less than the resonator fC.  
3. One or more of the following United States patents apply: 4,454,488 and  
4,616,197 and others pending.  
4. Typically, equipment designs utilizing this device require emissions testing and  
government approval, which is the responsibility of the equipment manufacturer.  
5. Unless noted otherwise, case temperature TC = +25°C±2°C.  
6. The design, manufacturing process, and specifications of this device are subject  
to change without notice.  
static (nonmotional) capacitance between pin1 and pin 2 measured at low fre-  
quency (10 MHz) with a capacitance meter. The measurement includes case  
parasitic capacitance with a floating case. For usual grounded case applica-  
tions (with ground connected to either pin 1 or pin 2 and to the case), add  
approximately 0.25 pF to CO.  
RF Monolithics, Inc.  
RFM Europe  
Phone: (972) 233-2903  
Phone: 44 1963 251383  
Fax: (972) 387-9148  
Fax: 44 1963 251510  
E-mail: info@rfm.com  
http://www.rfm.com  
RO2113-102699  
Page 1 of 2  
©1999 by RF Monolithics, Inc. The stylized RFM logo are registered trademarks of RF Monolithics, Inc.  

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