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N0413N-ZK-E2-AY PDF预览

N0413N-ZK-E2-AY

更新时间: 2022-11-26 22:38:45
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瑞萨 - RENESAS 开关
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8页 211K
描述
N-CHANNEL MOSFET FOR SWITCHING

N0413N-ZK-E2-AY 数据手册

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Preliminary Data Sheet  
R07DS0555EJ0100  
Rev.1.00  
N0413N  
N-CHANNEL MOSFET FOR SWITCHING  
Nov 07, 2011  
Description  
The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.  
Features  
Low on-state resistance  
RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)  
Low input capacitance  
Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)  
High current  
ID(DC) = ±100 A  
RoHS Compliant  
Ordering Information  
Part No.  
N0413N-ZK-E1-AY ∗  
N0413N-ZK-E2-AY ∗  
Lead Plating  
Pure Sn (Tin)  
Packing  
Package  
1
1
Tape  
TO-263  
1.39 g TYP.  
800 p/reel  
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)  
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
40  
20  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
V
100  
A
1
Drain Current (pulse) ∗  
400  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
119  
W
W
°C  
°C  
A
PT2  
1.5  
Tch  
150  
Storage Temperature  
Single Avalanche Current ∗  
Single Avalanche Energy ∗  
Tstg  
55 to +150  
55  
2
IAS  
2
EAS  
300  
mJ  
Thermal Resistance  
Channel to Case (Drain) Thermal Resistance Rth(ch-C)  
1.05  
83.3  
°C/W  
°C/W  
2
Channel to Ambient Thermal Resistance ∗  
Rth(ch-A)  
Notes: 1. PW 10 μs, Duty Cycle 1%  
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 0 V, L = 100 μH  
R07DS0555EJ0100 Rev.1.00  
Nov 07, 2011  
Page 1 of 6  

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