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N0400P_12 PDF预览

N0400P_12

更新时间: 2022-11-26 22:38:35
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
9页 226K
描述
N0400P

N0400P_12 数据手册

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Preliminary Data Sheet  
R07DS0500EJ0200  
Rev.2.00  
N0400P  
MOS FIELD EFFECT TRANSISTOR  
Aug 19, 2011  
Description  
The N0400P is P-channel MOS Field Effect Transistor designed for high current and 2.5 V drive switching applications.  
Features  
2.5 V drive available  
Super low on-state resistance  
RDS(on)1 = 40 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)  
RDS(on)2 = 73 mΩ MAX. (VGS = 2.5 V, ID = 3.8 A)  
Built-in gate protection diode  
Ordering Information  
PART NUMBER  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
N0400P-ZK-E1-AY Note  
N0400P-ZK-E2-AY Note  
Tape 2500 p/reel  
TO-252 (MP-3ZK)  
Note Pb-free (This product does not contain Pb in external electrode.)  
Absolute Maximum Ratings (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
40  
m12  
V
V
m15  
A
m45  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
25  
W
W
°C  
°C  
A
PT2  
1.0  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
16  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
25  
mJ  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 12 0 V  
Thermal Resistance  
Channel to Case Thermal Resistance  
Rth(ch-C)  
5.0  
°C/W  
°C/W  
Channel to Ambient Thermal Resistance  
Rth(ch-A)  
125  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
R07DS0500EJ0200 Rev.2.00  
Aug 19, 2011  
Page 1 of 7  

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