Data Sheet
N0202R
PNP SILICON EPITAXIAL TRANSISTOR
R07DS0720EJ0100
Rev.1.00
Mar 30, 2012
FEATURES
Complements to N0202S.
CEO = 20 V
C(DC) = 2.0 A
Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM)
V
I
PRODUCT LINEUP
Part Number
Packing
Tape 3000p/reel
Package Name
SOT-23F
Package Code
PVSF0003ZA-A
Mass [TYP.]
0.0126g
N0202R-T1-AT
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
PT1
Ratings
20
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse) *1
Total Power Dissipation
Total Power Dissipation *2
Junction Temperature
Storage Temperature
V
V
20
6.0
V
2.0
A
3.0
A
0.2
W
W
C
C
PT2
1.0
Tj
150
Tstg
55 to 150
Note *1. PW 10 ms, Duty Cycle 50%
*2. FR-4 board size 2500 mm2 1.6 mm, t 5 sec
ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
Condition
VCB = 16 V, IE = 0
VEB = 6.0 V, IC = 0
MIN.
TYP.
350
MAX.
100
100
600
Unit
nA
IEBO
hFE1
hFE2
nA
1
1
*
*
VCE = 2.0 V, IC = 100 mA
VCE = 2.0 V, IC = 2.0 A
IC = 1.5 A, IB = 50 mA
IC = 1.5 A, IB = 50 mA
VCE = 6 V, IC = 100 mA
VCE = 6.0 V, IE = 10 mA
VCB = 10.0 V, IE = 0, f = 1.0 MHz
135
40
DC Current Gain
1
VCE(sat)
*
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
Note *1. Pulsed
0.3
1.05
680
90
0.5
1.2
750
V
V
1
VBE(sat)
*
1
VBE
fT
*
650
mV
MHz
pF
Cob
55
hFE Classification
Marking
hFE1
ZM
ZL
200 to 400
ZK
135 to 270
300 to 600
R07DS0720EJ0100 Rev.1.00
Mar 30, 2012
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