Datasheet > N0202R-T1-AT

N0202R-T1-AT

更新时间： 2022-04-21 18:54:27

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管
页数	文件大小	规格书
5页	104K
描述
PNP SILICON EPITAXIAL TRANSISTOR

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N0202R-T1-AT 数据手册

Data Sheet

N0202R

PNP SILICON EPITAXIAL TRANSISTOR

R07DS0720EJ0100

Rev.1.00

Mar 30, 2012

FEATURES



Complements to N0202S.

_CEO= 20 V

_C(DC)= 2.0 A

Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM)

PRODUCT LINEUP

Part Number

Packing

Tape 3000p/reel

Package Name

SOT-23F

Package Code

PVSF0003ZA-A

Mass [TYP.]

0.0126g

N0202R-T1-AT

ABSOLUTE MAXIMUM RATINGS (T_a= 25C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C(DC)

I_C(pulse)

P_T1

Ratings

20

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (pulse) *¹

Total Power Dissipation

Total Power Dissipation *²

Junction Temperature

Storage Temperature

20

6.0

2.0

3.0

0.2

C

P_T2

1.0

T_j

150

T_stg

55 to 150

Note *1. PW  10 ms, Duty Cycle  50%

*2. FR-4 board size 2500 mm² 1.6 mm, t  5 sec

ELECTRICAL CHARACTERISTICS (T_a= 25C)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

I_CBO

Condition

V_CB= 16 V, I_E= 0

V_EB= 6.0 V, I_C= 0

MIN.

TYP.

350

MAX.

100

600

Unit

I_EBO

h_FE1

h_FE2

V_CE= 2.0 V, I_C= 100 mA

V_CE= 2.0 V, I_C= 2.0 A

I_C= 1.5 A, I_B= 50 mA

V_CE= 6 V, I_C= 100 mA

V_CE= 6.0 V, I_E= 10 mA

V_CB= 10.0 V, I_E= 0, f = 1.0 MHz

135

DC Current Gain

V_CE(sat)

Collector Saturation Voltage

Base Saturation Voltage

Base to Emitter Voltage

Gain Bandwidth Product

Output Capacitance

Note *1. Pulsed

0.3

1.05

680

0.5

1.2

750

V_BE(sat)

V_BE

f_T

650

MHz

C_ob

h_FEClassification

Marking

hFE1

200 to 400

135 to 270

300 to 600

R07DS0720EJ0100 Rev.1.00

Mar 30, 2012

Page 1 of 5

12 3 4 5

下载PDF

与N0202R-T1-AT相关器件

型号	品牌	描述	获取价格	数据表
N023RH02GOO	IXYS	Silicon Controlled Rectifier, 36.11A I(T)RMS, 48000mA I(T), 200V V(DRM), 200V V(RRM), 1 El	获取价格
N023RH02HOO	IXYS	Silicon Controlled Rectifier, 36.11A I(T)RMS, 48000mA I(T), 200V V(DRM), 200V V(RRM), 1 El	获取价格
N023RH02JOO	IXYS	Silicon Controlled Rectifier, 36.11A I(T)RMS, 48000mA I(T), 200V V(DRM), 200V V(RRM), 1 El	获取价格
N023RH02KOO	IXYS	Silicon Controlled Rectifier, 36.11A I(T)RMS, 48000mA I(T), 200V V(DRM), 200V V(RRM), 1 El	获取价格
N023RH02LOO	IXYS	Silicon Controlled Rectifier, 36.11A I(T)RMS, 48000mA I(T), 200V V(DRM), 200V V(RRM), 1 El	获取价格
N023RH06HOO	IXYS	Silicon Controlled Rectifier, 36.11A I(T)RMS, 48000mA I(T), 600V V(DRM), 600V V(RRM), 1 El	获取价格