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N0201R-T1-AT

更新时间: 2022-04-21 18:54:24
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管
页数 文件大小 规格书
5页 105K
描述
PNP SILICON EPITAXIAL TRANSISTOR

N0201R-T1-AT 数据手册

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Data Sheet  
N0201R  
PNP SILICON EPITAXIAL TRANSISTOR  
R07DS0718EJ0100  
Rev.1.00  
Mar 30, 2012  
FEATURES  
Complements to N0201S.  
CEO = 25 V  
C(DC) = 1.0 A  
Miniature package SOT-23F (2SB798: Package variation of 3pPoMM)  
V
I
PRODUCT LINEUP  
Part Number  
Packing  
Tape 3000p/reel  
Package Name  
SOT-23F  
Package Code  
PVSF0003ZA-A  
Mass [TYP.]  
0.0126g  
N0201R-T1-AT  
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)  
PT1  
Ratings  
30  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
Collector Current (pulse) *1  
Total Power Dissipation  
Total Power Dissipation *2  
Junction Temperature  
Storage Temperature  
V
V
25  
5.0  
V
1.0  
A
1.5  
A
0.2  
W
W
C  
C  
PT2  
1.0  
Tj  
150  
Tstg  
55 to 150  
Note *1. PW 10 ms, Duty Cycle 50%  
*2. FR-4 board size 2500 mm2 1.6 mm, t 5 sec  
ELECTRICAL CHARACTERISTICS (Ta = 25C)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
Condition  
VCB = 30 V, IE = 0  
VEB = 5.0 V, IC = 0  
MIN.  
TYP.  
MAX.  
100  
100  
400  
Unit  
nA  
IEBO  
hFE1  
hFE2  
nA  
1
1
*
*
VCE = 1.0 V, IC = 100 mA  
VCE = 1.0 V, IC = 1.0 A  
IC = 1.0 A, IB = 100 mA  
IC = 1.0 A, IB = 100 mA  
VCE = 6.0 V, IC = 10 mA  
VCE = 6.0 V, IE = 10 mA  
VCB = 10.0 V, IE = 0, f = 1.0 MHz  
90  
50  
200  
100  
0.25  
1.0  
640  
90  
DC Current Gain  
1
VCE(sat)  
*
Collector Saturation Voltage  
Base Saturation Voltage  
Base to Emitter Voltage  
Gain Bandwidth Product  
Output Capacitance  
Note *1. Pulsed  
0.4  
1.2  
700  
V
V
1
VBE(sat)  
*
1
VBE  
fT  
*
600  
mV  
MHz  
pF  
Cob  
27  
hFE Classification  
Marking  
hFE1  
DM  
DL  
DK  
90 to 180  
135 to 270  
200 to 400  
R07DS0718EJ0100 Rev.1.00  
Mar 30, 2012  
Page 1 of 4  

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