Datasheet > M6MGB64BS8AWG-P

M6MGB64BS8AWG-P

更新时间： 2024-01-18 18:56:52

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
3页	117K
描述
M6MGB64BS8AWG-P

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

M6MGB64BS8AWG-P 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

M6MGB64BS8AWG-P 数据手册

Renesas LSIs

M6MGB/T64BS8AWG-P

67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY

8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM

Stacked-CSP (Chip Scale Package)

Description

The RENESAS M6MGB/T64BS8AWG-P is suitable for a

high performance cellular phone and a mobile PC that are

required to be small mounting area, weight and small power

dissipation.

The RENESAS M6MGB/T64BS8AWG-P is a Stacked Chip

Scale Package (S-CSP) that contents 64M-bit Flash memory

and 8M-bit SRAM in a 67-pin Stacked CSP with leaded

solder ball.

64M-bit Flash memory is a 4,194,304 words, single power

supply and high performance non-volatile memory fabricated

by CMOS technology for the peripheral circuit and DINOR IV

(Divided bit-line NOR IV) architecture for the memory cell. All

memory blocks are locked and can not be programmed or

erased, when F-WP# is Low. Using Software Lock Release

function, program or erase operation can be executed.

Features

Access Time

Flash

SRAM

70ns (Max.)

85ns (Max.)

F-VCC =S-VCC=2.7 ~ 3.0V

Ta= -40 ~ 85 degree

67pin S-CSP,

Supply Voltage

Ambient Temperature

Package

Ball pitch 0.80mm

Outer-ball:Sn - Pb

8M-bit SRAM is a 524,288 words asynchronous SRAM

fabricated by CMOS technology for the peripheral circuit and

TFT type transistor for the memory cell.

Application

Mobile communication products

PIN CONFIGURATION (TOP VIEW)

INDEX(Laser Marking)

S-

F-

S-

F-

A20

A11

A16

A18

LB#

WP#

GND

WE#

F-

RY/BY#

S-

UB#

F-

RP#

A19

A17

S-

OE#

A10

A15

A14

A21

DQ11

F-

CE#

DQ13 DQ15

DQ9

DQ8

DQ0

DQ12

A13

A12

S-

CE2

S-

WE#

F-

GND

DQ10

DQ2

DQ6

F-

OE#

F-

GND

S-

VCC

DQ4

DQ5

DQ14

DQ7

S-

CE1#

F-

VCC

DQ1

DQ3

(Top View)

8.5 mm

F-VCC

S-VCC

: VCC for Flash Memory

: VCC for SRAM

: GND for Flash Memory

: GND for SRAM

: Common address for Flash/SRAM

: Address for Flash

: Data I/O

: Flash chip enable

: SRAM chip enable1

: SRAM chip enable2

F-OE#

:Output enable for Flash

:Output enable for SRAM

:Write enable for Flash

:Write enable for SRAM

:Write protect for Flash

:Reset power down for Flash

:Flash Ready/Busy

:Lower byte control for SRAM

:Upper byte control for SRAM

:Non Connection

S-OE#

F-WE#

S-WE#

F-WP#

F-RP#

F-RY/BY#

S-LB#

S-UB#

F-GND

S-GND

A0-A18

A19-A21

DQ0-DQ15

F-CE#

S-CE1#

S-CE2

Rev.1.0.48a_bebz

12 3

下载PDF

与M6MGB64BS8AWG-P相关器件

型号	品牌	描述	获取价格	数据表
M6MGB64BS8BWG	RENESAS	SPECIALTY MEMORY CIRCUIT, PBGA67, 0.80 MM PITCH, LEAD FREE, STACKED, CSP-67	获取价格
M6MGB64BS8BWG-P	RENESAS	SPECIALTY MEMORY CIRCUIT, PBGA67, 0.80 MM PITCH, STACKED, CSP-67	获取价格
M6MGD137W34DKT	RENESAS	M6MGD137W34DKT	获取价格
M6MGD137W34DWG	RENESAS	134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-W	获取价格
M6MGD13TW34DWG	RENESAS	134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-W	获取价格
M6MGD13TW34DWG-P	RENESAS	M6MGD13TW34DWG-P	获取价格