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HM6216514LTTI-5SL PDF预览

HM6216514LTTI-5SL

更新时间: 2024-01-27 08:07:45
品牌 Logo 应用领域
瑞萨 - RENESAS 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
18页 96K
描述
Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit)

HM6216514LTTI-5SL 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.67
Is Samacsys:N最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00001 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.035 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

HM6216514LTTI-5SL 数据手册

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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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