生命周期: | Not Recommended | 包装说明: | LDPAK-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.34 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 300 V | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.26 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FS20VS-6-T1 | MITSUBISHI | Power Field-Effect Transistor, 20A I(D), 300V, 0.26ohm, 1-Element, N-Channel, Silicon, Met |
获取价格 |
|
FS20VS-6-T2 | MITSUBISHI | Power Field-Effect Transistor, 20A I(D), 300V, 0.26ohm, 1-Element, N-Channel, Silicon, Met |
获取价格 |
|
FS20VSJ-3 | RENESAS | High-Speed Switching Use Pch Power MOS FET |
获取价格 |
|
FS20VSJ-3-A1 | RENESAS | High-Speed Switching Use Pch Power MOS FET |
获取价格 |
|
FS20VSJ-3-T11 | RENESAS | High-Speed Switching Use Pch Power MOS FET |
获取价格 |
|
FS210 | TTELEC | FlexSense Transmissive Increment Encoder Sensor |
获取价格 |