2SJ484

更新时间： 2024-02-20 09:00:24

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2SJ484 数据手册

2SJ484

Silicon P Channel MOS FET

REJ03G0868-0300

(Previous: ADE-208-501A)

Rev.3.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

R_{DS (on)}= 0.18 Ω typ. (at V_GS= –10 V, I_D= –1 A)

Low drive current

High speed switching

•

4 V gate drive devices.

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK

)

1. Gate

2. Drain

3. Source

4. Drain

Note: Marking is “WY”.

*UPAK is a trademark of Renesas Technology Corp.

Rev.3.00 Sep 07, 2005 page 1 of 6

12 3 4 5 6 7

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型号	品牌	描述	获取价格	数据表
2SJ484WY	HITACHI	Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal	获取价格
2SJ484WYTL	HITACHI	Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal	获取价格
2SJ484WYTL	RENESAS	2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET	获取价格
2SJ484WYTL-E	RENESAS	Silicon P Channel MOS FET	获取价格
2SJ484WYTR	RENESAS	2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET	获取价格
2SJ484WYTR	HITACHI	2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET	获取价格