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2SJ186 PDF预览

2SJ186

更新时间: 2024-02-19 12:32:39
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管
页数 文件大小 规格书
7页 84K
描述
Silicon P Channel MOS FET

2SJ186 技术参数

生命周期:TransferredReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.28
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (ID):0.5 A
最大漏源导通电阻:12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ186 数据手册

 浏览型号2SJ186的Datasheet PDF文件第2页浏览型号2SJ186的Datasheet PDF文件第3页浏览型号2SJ186的Datasheet PDF文件第4页浏览型号2SJ186的Datasheet PDF文件第5页浏览型号2SJ186的Datasheet PDF文件第6页浏览型号2SJ186的Datasheet PDF文件第7页 
2SJ186  
Silicon P Channel MOS FET  
REJ03G0849-0200  
(Previous: ADE-208-1184)  
Rev.2.00  
Sep 07, 2005  
Description  
High speed power switching  
Features  
Low on-resistance  
High speed switching  
Low drive current  
Suitable for motor drive, DC-DC converter, power switch and solenoid drive  
Outline  
RENESAS Package code: PLZZ0004CA-A  
(Package name: UPAK R  
)
D
1
2
3
1. Gate  
2. Drain  
3. Source  
4. Drain  
G
4
S
Note: Marking is “CY”.  
*UPAK is a trademark of Renesas Technology Corp.  
Rev.2.00 Sep 07, 2005 page 1 of 6  

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