5秒后页面跳转
2SJ181STR-E PDF预览

2SJ181STR-E

更新时间: 2024-01-17 07:10:35
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 104K
描述
Silicon P Channel MOS FET

2SJ181STR-E 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:DPAK(S)包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):0.5 A
最大漏极电流 (ID):0.5 A最大漏源导通电阻:25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):20 W
最大脉冲漏极电流 (IDM):1 A子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ181STR-E 数据手册

 浏览型号2SJ181STR-E的Datasheet PDF文件第2页浏览型号2SJ181STR-E的Datasheet PDF文件第3页浏览型号2SJ181STR-E的Datasheet PDF文件第4页浏览型号2SJ181STR-E的Datasheet PDF文件第5页浏览型号2SJ181STR-E的Datasheet PDF文件第6页浏览型号2SJ181STR-E的Datasheet PDF文件第7页 
Preliminary Datasheet  
R07DS0395EJ0300  
(Previous: REJ03G0848-0200)  
Rev.3.00  
2SJ181(L), 2SJ181(S)  
Silicon P Channel MOS FET  
May 16, 2011  
Description  
High speed power switching  
Features  
Low on-resistance  
High speed switching  
Low drive current  
No secondary breakdown  
Suitable for switching regulator and DC-DC converter  
Outline  
RENESAS Package code: PRSS0004ZD-A  
RENESAS Package code: PRSS0004ZD-C  
(Package name: DPAK (L)-(1) )  
(Package name: DPAK (S) )  
4
4
D
1. Gate  
1
2
3
2. Drain  
3. Source  
4. Drain  
G
1
2
3
S
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Value  
–600  
±15  
Unit  
V
V
–0.5  
–1.0  
–0.5  
20  
A
Note 1  
Drain peak current  
ID (pulse)  
A
Body to drain diode reverse drain current  
Channel dissipation  
IDR  
Pch Note 2  
Tch  
A
W
°C  
°C  
Channel temperature  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 μs, duty cycle 1%  
2. Value at Tc = 25°C  
R07DS0395EJ0300 Rev.3.00  
May 16, 2011  
Page 1 of 6  

与2SJ181STR-E相关器件

型号 品牌 描述 获取价格 数据表
2SJ182 HITACHI Silicon P-Channel MOS FET

获取价格

2SJ182(L) ETC TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-251VAR

获取价格

2SJ182(S) ETC TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252VAR

获取价格

2SJ182(S)TR HITACHI Power Field-Effect Transistor, 3A I(D), 60V, 0.55ohm, 1-Element, P-Channel, Silicon, Metal

获取价格

2SJ182L HITACHI SILICON SPEED POWER SWITCHING

获取价格

2SJ182S HITACHI SILICON SPEED POWER SWITCHING

获取价格