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2SA1037S-T PDF预览

2SA1037S-T

更新时间: 2024-01-10 00:04:56
品牌 Logo 应用领域
RECTRON 晶体晶体管
页数 文件大小 规格书
2页 290K
描述
Transistor

2SA1037S-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.59
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SA1037S-T 数据手册

 浏览型号2SA1037S-T的Datasheet PDF文件第2页 
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
2SA1037  
SOT-23 BIPOLAR TRANSISTORS  
TRANSISTOR(PNP)  
FEATURES  
* Power dissipation  
PCM :  
0.2  
W
A
(Tamb=25OC)  
Collector current  
ICM :  
Collector-base voltage  
*
*
*
-0.15  
-60  
V
:
V
(BR)CBO  
SOT-23  
Operating and storage junction temperature range  
T ,Tstg: -55OCto+150OC  
J
COLLECTOR  
3
0.055(1.40)  
0.047(1.20)  
BASE  
MECHANICAL DATA  
* Case: Molded plastic  
1
2
EMITTER  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
0.020(0.50)  
0.012(0.30)  
0.004(0.10)  
0.000(0.00)  
* Weight: 0.008 gram  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
1
2
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
3
Dimensions in inches and (millimeters)  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Collector-base breakdown voltage (I = -50µA, I =0)  
SYMBOL  
MIN.  
-60  
TYP.  
MAX.  
UNITS  
V
-
-
-
-
-
-
-
-
V
V
V
C
E
(BR)CBO  
(BR)CEO  
-50  
Collector-emitter breakdown voltage (I = -1mA, I =0)  
V
C
B
Emitter-base breakdown voltage (I = -50µA, I =0)  
V
(BR)EBO  
-6  
-
E
C
Collector cut-off current (V = -60V, I =0)  
-0.1  
-0.1  
I
µA  
µA  
-
CB  
E
CBO  
-
Emitter cut-off current (V = -6V, I =0)  
I
EB  
C
EBO  
DC current gain (V = -6V, I = -1mA)  
h
CE  
C
FE  
120  
-
-
-
560  
-0.5  
Collector-emitter saturation voltage (I = -50mA, I = -5mA)  
V
V
C
B
CE(sat)  
Transistion frequency (V = -12V, I = -2mA, f= 30MHz)  
120  
CE  
C
-
-
MHz  
f
T
CLASSIFICATION OF h  
FE  
RANK  
Range  
Q
R
180-390  
FR  
S
120-270  
FQ  
270-560  
FS  
Marking  
2006-3  

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