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PHB145NQ06T PDF预览

PHB145NQ06T

更新时间: 2024-01-08 09:18:09
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
12页 85K
描述
75A, 55V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3

PHB145NQ06T 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliant风险等级:5.75
配置:Single最大漏极电流 (Abs) (ID):75 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

PHB145NQ06T 数据手册

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PHB145NQ06T  
N-channel TrenchMOS™ standard level FET  
Rev. 01 — 06 May 2004  
Product data  
1. Product profile  
1.1 Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS™ technology.  
1.2 Features  
Standard level threshold  
Low on-state resistance.  
1.3 Applications  
Motors, lamps, solenoids  
DC-to-DC converters  
Uninterruptible power supplies  
General industrial applications.  
1.4 Quick reference data  
VDS 55 V  
Ptot 250 W  
ID 75 A  
RDSon 6 m.  
2. Pinning information  
Table 1:  
Pin Description  
Pinning - SOT404 (D2-PAK), simplified outline and symbol  
Simplified outline  
Symbol  
1
2
3
gate (g)  
d
mb  
[1]  
drain (d)  
source (s)  
g
mb mounting base;  
connected to  
drain (d)  
s
MBB076  
2
1
3
MBK116  
SOT404 (D2-PAK)  
[1] It is not possible to make connection to pin 2 of the SOT404 package.  

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