Datasheet > BF1217WR,115

BF1217WR,115

更新时间： 2024-02-12 17:33:41

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	140K
描述
BF1217WR - N-channel dual-gate MOSFET

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

BF1217WR,115 技术参数

BF1217WR

N-channel dual gate MOSFET

Rev. 2 — 20 June 2011

Product data sheet

1. Product profile

1.1 General description

Enhancement type N-channel field-effect transistor with source and substrate

interconnected. Integrated diodes between gates and source protect against excessive

input voltage surges. The BF1217WR is encapsulated in the SOT343R plastic package.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Excellent low frequency noise performance

 Superior cross modulation performance during AGC

 High forward transfer admittance

 High forward transfer admittance to input capacitance ratio

1.3 Applications

 Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply

voltage

 digital and analog television tuners

 professional communication equipment

12 3 4 5 6 7...17

下载PDF

型号	品牌	描述	获取价格	数据表
BF1218	NXP	RF Manual 16th edition	获取价格
BF1225	API	FERRITE CORE 146 OHM HINGED 4MM	获取价格
BF-125.000MBE-T	ETC	OSC XO 125.000MHZ LVDS SMD	获取价格
BF-125.000MCE-T	ETC	OSC XO 125.000MHZ LVDS SMD	获取价格
BF128128A	BOLYMIN	FSTN Transflective LCD, COF package Built-in driver HD66750	获取价格
BF128128E	BOLYMIN	FSTN Transflective LCD, COF package Built-in driver HD66750	获取价格