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ACT108W-600E PDF预览

ACT108W-600E

更新时间: 2024-02-26 08:13:46
品牌 Logo 应用领域
恩智浦 - NXP 触发装置开关三端双向交流开关电源开关光电二极管
页数 文件大小 规格书
13页 371K
描述
AC Thyristor power switch

ACT108W-600E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.39
Is Samacsys:N配置:SINGLE
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:0.8 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30触发设备类型:TRIAC
Base Number Matches:1

ACT108W-600E 数据手册

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ACT108W-600E  
AC Thyristor power switch  
Rev. 03 — 21 October 2009  
Product data sheet  
1. Product profile  
1.1 General description  
AC Thyristor power switch in a SOT223 surface-mountable plastic package with  
self-protective capabilities against low and high energy transients  
1.2 Features and benefits  
„ Common terminal on mounting base  
allows multiple ACTs on shared  
cooling pad  
„ Safe clamping of low energy  
over-voltage transients  
„ Self-protective turn-on during high  
„ Exclusive negative gate triggering  
„ Full cycle AC conduction  
energy voltage transients  
„ Suface-mountable package  
„ Very high noise immunity  
„ Remote gate separates the gate driver  
from the effects of the load current  
1.3 Applications  
„ Contactors, circuit breakers, valves,  
„ Lower-power highly inductive, resistive  
dispensers and door locks  
and safety loads  
„ Fan motor circuits  
„ Pump motor circuits  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
VDRM  
IGT  
repetitive peak  
off-state voltage  
-
-
600  
V
gate trigger current  
VD = 12 V; IT = 100 mA;  
LD+ G-; Tj = 25 °C;  
see Figure 10  
1
-
10  
mA  
VD = 12 V; IT = 100 mA;  
LD- G-; Tj = 25 °C  
1
-
-
-
10  
0.8  
-
mA  
A
IT(RMS)  
dVD/dt  
RMS on-state  
current  
full sine wave; Tsp 112 °C;  
see Figure 3, 1 and 2  
-
rate of rise of  
VDM = 402 V; Tj = 125 °C;  
gate open circuit;  
see Figure 14  
1000  
V/µs  
off-state voltage  

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