2N7002E

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2N7002E 技术参数

2N7002E

N-channel TrenchMOS™ FET

Rev. 02 — 26 April 2005

Product data sheet

1. Product proﬁle

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS™ technology.

1.2 Features

■ Logic level threshold compatible

■ Surface-mounted package

■ Very fast switching

■ TrenchMOS™ technology

1.3 Applications

■ Logic level translator

■ High speed line driver

1.4 Quick reference data

■ V_DS≤ 60 V

■ R_DSon≤ 3 Ω

■ I_D≤ 385 mA

■ P_tot= 0.83 W

2. Pinning information

Table 1:

Pinning

Description

gate (G)

Simpliﬁed outline

Symbol

source (S)

drain (D)

mbb076

SOT23

12 3 4 5 6 7...11

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型号	品牌	描述	获取价格	数据表
2N7002E_10	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002E_11	ONSEMI	Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23	获取价格
2N7002E_15	DIODES	N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
2N7002E-13	DIODES	Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Meta	获取价格
2N7002E-13-F	DIODES	N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
2N7002-E3	VISHAY	N-Channel 60-V (D-S) MOSFET	获取价格