2N7002BKS

更新时间： 2024-02-19 21:13:04

品牌	Logo	应用领域
恩智浦 - NXP		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
16页	384K
描述
60 V, 300 mA dual N-channel Trench MOSFET

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技术参数
数据手册

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2N7002BKS 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002BKS 数据手册

2N7002BKS

60 V, 300 mA dual N-channel Trench MOSFET

Rev. 2 — 23 September 2010

Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small

SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

Trench MOSFET technology

ESD protection up to 2 kV

AEC-Q101 qualified

1.3 Applications

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

T_amb= 25 °C

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

±20

300

[1]

T_amb= 25 °C;

V_GS= 10 V

R_DSon

drain-source on-state

resistance

T_j= 25 °C;

V_GS= 10 V;

I_D= 500 mA

1.6

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...16

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