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W02M

更新时间: 2024-01-01 21:56:06
品牌 Logo 应用领域
强茂 - PANJIT 二极管
页数 文件大小 规格书
2页 431K
描述
1.0 AMPERES MINIATURE SINGLE-PHASE SILICON BRIDGE

W02M 技术参数

生命周期:Active包装说明:O-PBCY-W4
Reach Compliance Code:unknown风险等级:5.59
最小击穿电压:200 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:O-PBCY-W4最大非重复峰值正向电流:50 A
元件数量:4相数:1
端子数量:4最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL最大重复峰值反向电压:200 V
表面贴装:NO端子形式:WIRE
端子位置:BOTTOMBase Number Matches:1

W02M 数据手册

 浏览型号W02M的Datasheet PDF文件第2页 
DATA SHEET  
W005M~W10M  
1.0 AMPERES MINIATURE SINGLE-PHASE SILICON BRIDGE  
Unit: inch (mm)  
AM  
1.0 Amperes  
CURRENT  
50 to 1000 Volts  
VOLTAGE  
FEATURES  
.370(9.4)  
.339(8.6)  
• Plastic material used carries Underwriters Laboratory recognition.  
• High surge dielectric strength.  
• Typical IR LESS Than 1uA.  
• Exceeds environmental standards of MIL-STD-19500  
• Ideal for printed circuit board.  
• High temperature soldering guaranteed: 265OC/10 seconds/ .375”  
(9.5 mm) lead length/5 Ibs. (2.3kg) tension  
• Pb free product are available : 99% Sn can meet RoHS environment  
substance directive request  
.031(0.8)  
.028(0.7)  
MECHANICALDATA  
Case: Reliable low cost construction utilizing molded plastic technique  
.220(5.6)  
.181(4.6)  
Bottom View  
Terminals: Leads solderable per MIL-STE-750, Method 2026  
Mounting Position: Any  
.220(5.6)  
.181(4.6)  
Weight: 0.04 ounces, 1.1 grams.  
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS  
Rating at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, Single phase, half wave, 60Hz.  
For Capacitive load derate current by 20%.  
PARAMETER  
SYMBOL W005M W01M  
W02M W04M  
W06M  
600  
W08M  
800  
W10M  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
V
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
1000  
700  
Maximum RMS Bridge Input Voltage  
280  
400  
1.0  
420  
600  
560  
800  
V
V
A
Maximum DC Blocking Voltage  
V
DC  
100  
1000  
Maximum Average Forward Rectified Output Current .375"  
IAV  
(9.5mm ) Lead Length at TA  
=25OC  
Peak Forward Surge Current : 8.3ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
50.0  
5.0  
A
A2s  
V
I2t Rating for fusing ( t<8.35ms)  
I 2  
t
Maximum Forward Voltage Drop per Element at 1.0A  
V
F
1.0  
Maximum DC Reverse Current T  
at Rated DC Blocking Voltage T  
A
=25 OC  
=100 OC  
10.0  
1000  
µA  
I
R
A
Typical Junction capacitance per bridge element (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
C
J
24  
pF  
OC  
OC  
TJ  
-55 to + 125  
-55 to + 150  
TSTG  
NOTES:  
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.  
PAGE . 1  
STAD-NOV.06.2003  

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