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PUA3111 PDF预览

PUA3111

更新时间: 2024-01-13 09:44:11
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
3页 81K
描述
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SIP-8

PUA3111 技术参数

生命周期:Obsolete零件包装代码:SIP
包装说明:IN-LINE, R-PSIP-T8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:COMMON EMITTER, 3 ELEMENTS最小直流电流增益 (hFE):15
JESD-30 代码:R-PSIP-T8元件数量:3
端子数量:8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

PUA3111 数据手册

 浏览型号PUA3111的Datasheet PDF文件第2页浏览型号PUA3111的Datasheet PDF文件第3页 
Power Transistor Arrays  
PUA3111 (PU3111)  
Silicon NPN triple diffusion planar type  
For power amplification/switching  
Unit: mm  
Complementary to PUA3211 (PU3211)  
20.2 0.3  
4.0 0.2  
Features  
High forward current transfer ratio hFE which has satisfactory linearity  
Low collector-emitter saturation voltage VCE(sat)  
NPN 3 elements  
0.8 0.25  
0.5 0.15  
0.5 0.15  
1.0 0.25  
2.54 0.2  
Absolute Maximum Ratings TC = 25°C  
7 × 2.57 = 17.78 0.25  
Parameter  
Symbol  
Rating  
Unit  
V
C 1.5 0.5  
1: Emitter  
2: Base  
3: Collector  
4: Base  
5: Collector  
6: Base  
Collector-base voltage (Emitter open) VCBO  
60  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
VCEO  
VEBO  
IC  
60  
V
1
2 3 4 5 6 7 8  
5
V
4
A
7: Collector  
8: Emitter  
Peak collector current  
Collector power dissipation  
Ta = 25°C  
ICP  
8
15  
A
SIP8-A1 Package  
PC  
W
2.4  
Junction temperature  
Tj  
150  
°C  
°C  
Storage temperature  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
VCEO  
VBE  
Conditions  
Min  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Base-emitter voltage  
IC = 30 mA, IB = 0  
60  
VCE = 4 V, IC = 3 A  
VCE = 60 V, VBE = 0  
VCE = 30 V, IB = 0  
VEB = 5 V, IC = 0  
2.0  
400  
700  
1
V
Collector-emitter current (E-B short)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICES  
µA  
µA  
mA  
ICEO  
IEBO  
hFE1  
VCE = 4 V, IC = 1 A  
VCE = 4 V, IC = 3 A  
40  
15  
250  
hFE2  
Collector-emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat) IC = 4 A, IB = 0.4 A  
1.5  
V
MHz  
µs  
fT  
ton  
tstg  
tf  
VCE = 10 V, IC = 0.1 A, f = 1 MHz  
20  
0.3  
1.2  
0.4  
IC = 4 A  
Storage time  
IB1 = 0.4 A, IB2 = − 0.4 A  
VCC = 50 V  
µs  
Fall time  
µs  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Internal Connection  
3
5
7
2
1
4
6
8
Note) The part number in the parenthesis shows conventional part number.  
Publication date: March 2004  
SJK00002AED  
1

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