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2SJ163TSK PDF预览

2SJ163TSK

更新时间: 2024-01-17 03:51:53
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 34K
描述
Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET

2SJ163TSK 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
其他特性:LOW NOISE配置:SINGLE
最大漏极电流 (ID):0.02 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

2SJ163TSK 数据手册

 浏览型号2SJ163TSK的Datasheet PDF文件第2页 
Silicon Junction FETs (Small Signal)  
2SJ163  
Silicon P-Channel Junction FET  
For general switching  
unit: mm  
2.8 +00..32  
1.5 +00..0255  
Complementary to 2SK1103  
0.65±0.15  
0.65±0.15  
Features  
Low ON-resistance  
Low-noise characteristics  
1
2
3
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Gate to Drain voltage  
Drain current  
Symbol  
VGDS  
ID  
Ratings  
65  
Unit  
V
20  
mA  
mA  
mW  
°C  
0.1 to 0.3  
0.4±0.2  
Gate current  
IG  
10  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
150  
1: Source  
2: Drain  
3: Gate  
JEDEC: TO-236  
EIAJ: SC-59  
Mini Type Package (3-pin)  
Tch  
150  
Tstg  
55 to +150  
°C  
Marking Symbol (Example): 4M  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
VDS = 10V, VGS = 0  
min  
typ  
max  
6  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
0.2  
IGSS  
VGS = 30V, VDS = 0  
10  
VGDS  
VGSC  
| Yfs |  
RDS(on)  
IG = 10µA, VDS = 0  
65  
Gate to Source cut-off voltage  
Forward transfer admittance  
Drain to Source ON-resistance  
VDS = 10V, ID = 10µA  
VDS = 10V, ID = 1mA, f = 1kHz  
VDS = 10mV, VGS = 0  
1.5  
2.5  
300  
12  
3.5  
V
1.8  
mS  
Input capacitance (Common Source) Ciss  
pF  
pF  
VDS = 10V, VGS = 0, f = 1MHz  
Reverse transfer capacitance (Common Source) Crss  
4
* IDSS rank classification  
Runk  
O
P
Q
R
IDSS (mA)  
0.2 to 1 0.6 to 1.5  
4MO 4MP  
1 to 3  
4MQ  
2.5 to 6  
4MR  
Marking Symbol  
1

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