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2SB0939 PDF预览

2SB0939

更新时间: 2024-01-08 17:06:12
品牌 Logo 应用领域
松下 - PANASONIC 晶体开关晶体管功率双极晶体管
页数 文件大小 规格书
4页 85K
描述
For Midium-Speed Power Switching

2SB0939 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
最大集电极电流 (IC):8 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):8 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

2SB0939 数据手册

 浏览型号2SB0939的Datasheet PDF文件第2页浏览型号2SB0939的Datasheet PDF文件第3页浏览型号2SB0939的Datasheet PDF文件第4页 
Power Transistors  
2SB0939 (2SB939), 2SB0939A (2SB939A)  
Silicon PNP epitaxial planar type Darlington  
Unit: mm  
For midium-speed power switching  
8.5 0.2  
6.0 0.2  
3.4 0.3  
Complementary to 2SD1262, 2SD1262A  
1.0 0.1  
Features  
High forward current transfer ratio hFE  
0 to 0.4  
High-speed switching  
R = 0.5  
R = 0.5  
1.0 0.1  
0.8 0.1  
N type package enabling direct soldering of the radiating fin to the  
printed circuit board, etc. of small electronic equipment.  
2.54 0.3  
1.4 0.1  
0.4 0.1  
5.08 0.5  
(8.5)  
(6.0)  
Absolute Maximum Ratings TC = 25°C  
1.3  
1
2
3
Parameter  
Symbol  
Rating  
60  
Unit  
2SB0939  
2SB0939A  
2SB0939  
2SB0939A  
VCBO  
V
Collector-base voltage  
(Emitter open)  
80  
(6.5)  
VCEO  
60  
V
Collector-emitter voltage  
(Base open)  
1 : Base  
2 : Collector  
3 : Emitter  
80  
Emitter-base voltage (Collector open) VEBO  
7  
V
A
N-G1 Package  
Collector current  
IC  
ICP  
PC  
8  
Note) Self-supported type package is also prepared.  
Peak collector current  
Collector power dissipation  
12  
A
Internal Connection  
45  
W
C
Ta = 25°C  
1.3  
B
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
E
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
60  
80  
Typ  
Max  
Unit  
2SB0939  
2SB0939A  
2SB0939  
2SB0939A  
VCEO  
IC = −30 mA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
Collector-base cut-off  
current (Emitter open)  
ICBO  
VCB = 60 V,IE = 0  
VCB = 80 V,IE = 0  
VEB = 7 V,IC = 0  
100  
100  
2  
µA  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
IEBO  
mA  
*
hFE1  
VCE = −3 V, IC = −4 A  
VCE = −3 V, IC = −8 A  
2000  
500  
10 000  
hFE2  
Base-emitter saturation voltage  
Collector-emitter saturation voltage  
Transition frequency  
Turn-on time  
VBE(sat) IC = 4 A,IB = 8 mA  
VCE(sat) IC = −4 A, IB = −8 mA  
2  
V
V
1.5  
fT  
ton  
tstg  
tf  
VCE = −10 V, IC = −0.5 A, f = 1 MHz  
20  
0.5  
2
MHz  
µs  
IC = −4 A,  
Strage time  
IB1 = −8 mA, IB2 = 8 mA  
VCC = −50 V  
µs  
Fall time  
1
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
P
hFE1  
2000 to 5000 4000 to 10000  
Note) The part number in the parenthesis shows conventional part number.  
SJD00020BED  
Publication date: March 2003  
1

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