5秒后页面跳转
2SB0936A PDF预览

2SB0936A

更新时间: 2024-02-13 03:22:30
品牌 Logo 应用领域
松下 - PANASONIC 晶体开关晶体管功率双极晶体管
页数 文件大小 规格书
4页 86K
描述
For Low-Voltage Switching

2SB0936A 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, N-G1, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):10 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):90JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SB0936A 数据手册

 浏览型号2SB0936A的Datasheet PDF文件第2页浏览型号2SB0936A的Datasheet PDF文件第3页浏览型号2SB0936A的Datasheet PDF文件第4页 
Power Transistors  
2SB0936 (2SB936), 2SB0936A (2SB936A)  
Silicon PNP epitaxial planar type  
For low-voltage switching  
Unit: mm  
Features  
Low collector-emitter saturation voltage VCE(sat)  
High-speed switching  
8.5 0.2  
6.0 0.2  
3.4 0.3  
1.0 0.1  
N type package enabling direct soldering of the radiating fin to the  
printed circuit board, etc. of small electronic equipment.  
0 to 0.4  
R = 0.5  
R = 0.5  
1.0 0.1  
0.8 0.1  
Absolute Maximum Ratings TC = 25°C  
2.54 0.3  
1.4 0.1  
0.4 0.1  
Parameter  
Symbol  
Rating  
40  
Unit  
5.08 0.5  
(8.5)  
2SB0936  
2SB0936A  
2SB0936  
2SB0936A  
VCBO  
V
Collector-base voltage  
(Emitter open)  
(6.0)  
(6.5)  
1.3  
1
2
3
50  
VCEO  
20  
V
Collector-emitter voltage  
(Base open)  
40  
Emitter-base voltage (Collector open) VEBO  
5  
V
A
1 : Base  
2 : Collector  
3 : Emitter  
Collector current  
IC  
ICP  
PC  
10  
Peak collector current  
Collector power dissipation  
20  
A
N-G1 Package  
40  
W
Note) Self-supported type package is also prepared.  
Ta = 25°C  
1.3  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
20  
40  
Typ  
Max  
Unit  
2SB0936  
2SB0936A  
2SB0936  
2SB0936A  
VCEO  
IC = −10 mA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
ICBO  
VCB = 40 V, IE = 0  
CB = 50 V, IE = 0  
50  
50  
50  
µA  
Collector-base cutoff  
current (Emitter open)  
V
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
IEBO  
VEB = 5 V, IC = 0  
µA  
*
hFE1  
VCE = −2 V, IC = − 0.1 A  
VCE = −2 V, IC = −3 A  
45  
90  
hFE2  
260  
1.5  
0.6  
Base-emitter voltage  
Collector-emitter saturation voltage  
Transition frequency  
Collector output capacitance  
(Common base, input open circuited)  
Turn-on time  
VBE(sat) IC = 10 A, IB = 0.33 A  
VCE(sat) IC = −10 A, IB = − 0.33 A  
V
V
fT  
VCE = −10 V, IC = − 0.5 A, f = 10 MHz  
100  
400  
MHz  
pF  
Cob  
VCB = −10 V, IE = 0, f = 1 MHz  
ton  
tstg  
tf  
0.1  
0.5  
0.1  
µs  
µs  
µs  
IC = −3 A,  
Storage time  
IB1 = − 0.1 A, IB2 = 0.1 A  
VCC = −20 V  
Fall time  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
P
hFE1  
90 to 180  
130 to 260  
Note) The part number in the parenthesis shows conventional part number.  
SJD00017BED  
Publication date: April 2003  
1

与2SB0936A相关器件

型号 品牌 描述 获取价格 数据表
2SB0936A(2SB936A) ETC パワーデバイス - パワートランジスタ - 汎用電力増幅

获取价格

2SB0936A|2SB936A ETC Power Device - Power Transistors - General-Purpose power amplification

获取价格

2SB0936AP ETC TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR

获取价格

2SB0936AQ ETC TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR

获取价格

2SB0936P ETC TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-262VAR

获取价格

2SB0936Q PANASONIC Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,

获取价格