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2SB0930A PDF预览

2SB0930A

更新时间: 2024-02-29 17:23:29
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 76K
描述
For Power Amplification

2SB0930A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

2SB0930A 数据手册

 浏览型号2SB0930A的Datasheet PDF文件第2页浏览型号2SB0930A的Datasheet PDF文件第3页 
Power Transistors  
2SB0930 (2SB930), 2SB0930A (2SB930A)  
Silicon PNP epitaxial planar type  
For power amplification  
Unit: mm  
Complementary to 2SD1253, 2SD1253A  
8.5 0.2  
6.0 0.2  
3.4 0.3  
Features  
1.0 0.1  
High forward current transfer ratio hFE which has satisfactory linearity  
Low collector-emitter saturation voltage VCE(sat)  
N type package enabling direct soldering of the radiating fin to the  
printed circuit board, etc. of small electronic equipment.  
0 to 0.4  
R = 0.5  
R = 0.5  
1.0 0.1  
0.8 0.1  
2.54 0.3  
1.4 0.1  
Absolute Maximum Ratings TC = 25°C  
0.4 0.1  
5.08 0.5  
Parameter  
Symbol  
Rating  
60  
Unit  
(8.5)  
(6.0)  
1.3  
2SB0930  
2SB0930A  
2SB0930  
2SB0930A  
VCBO  
V
1
2
3
Collector-base voltage  
(Emitter open)  
80  
VCEO  
60  
V
Collector-emitter voltage  
(Base open)  
(6.5)  
80  
1 : Base  
2 : Collector  
3 : Emitter  
Emitter-base voltage (Collector open) VEBO  
5  
V
A
Collector current  
IC  
ICP  
PC  
4  
N-G1 Package  
Peak collector current  
Collector power dissipation  
8  
A
Note) Self-supported type package is also prepared.  
40  
W
Ta = 25°C  
1.3  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
60  
80  
Typ  
Max  
Unit  
2SB0930  
2SB0930A  
2SB0930  
2SB0930A  
2SB0930  
2SB0930A  
VCEO  
IC = −30 mA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
ICES  
ICEO  
IEBO  
VCE = 60 V, VBE = 0  
VCE = 80 V, VBE = 0  
VCE = 30 V, IB = 0  
VCE = 60 V, IB = 0  
VEB = 5 V, IC = 0  
400  
400  
700  
700  
1  
µA  
µA  
Collector-emitter cutoff  
current (E-B short)  
Collector-emitter cutoff  
current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
mA  
*
hFE1  
VCE = −4 V, IC = −1 A  
VCE = −4 V, IC = −3 A  
VCE = 4 V, IC = 3 A  
70  
15  
250  
hFE2  
VBE  
Base-emitter voltage  
Collector-emitter saturation voltage  
Transition frequency  
Turn-on time  
2.0  
1.5  
V
V
VCE(sat) IC = −4 A, IB = −0.4 A  
fT  
ton  
tstg  
tf  
VCE = −10 V, IC = − 0.5 A, f = 10 MHz  
20  
0.2  
0.5  
0.2  
MHz  
µs  
IC = −4 A,  
Storage time  
IB1 = − 0.4 A, IB2 = 0.4 A  
VCC = −50 V  
µs  
Fall time  
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
P
hFE1  
70 to 150  
120 to 250  
Note) The part number in the parenthesis shows conventional part number.  
SJD00012BED  
Publication date: April 2003  
1

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