Power Transistors
2SB0930 (2SB930), 2SB0930A (2SB930A)
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
Complementary to 2SD1253, 2SD1253A
8.5 0.2
6.0 0.2
3.4 0.3
■ Features
1.0 0.1
• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
0 to 0.4
R = 0.5
R = 0.5
1.0 0.1
0.8 0.1
2.54 0.3
1.4 0.1
■ Absolute Maximum Ratings TC = 25°C
0.4 0.1
5.08 0.5
Parameter
Symbol
Rating
−60
Unit
(8.5)
(6.0)
1.3
2SB0930
2SB0930A
2SB0930
2SB0930A
VCBO
V
1
2
3
Collector-base voltage
(Emitter open)
−80
VCEO
−60
V
Collector-emitter voltage
(Base open)
(6.5)
−80
1 : Base
2 : Collector
3 : Emitter
Emitter-base voltage (Collector open) VEBO
−5
V
A
Collector current
IC
ICP
PC
−4
N-G1 Package
Peak collector current
Collector power dissipation
−8
A
Note) Self-supported type package is also prepared.
40
W
Ta = 25°C
1.3
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
■ Electrical Characteristics TC = 25°C 3°C
Parameter
Symbol
Conditions
Min
−60
−80
Typ
Max
Unit
2SB0930
2SB0930A
2SB0930
2SB0930A
2SB0930
2SB0930A
VCEO
IC = −30 mA, IB = 0
V
Collector-emitter voltage
(Base open)
ICES
ICEO
IEBO
VCE = −60 V, VBE = 0
VCE = −80 V, VBE = 0
VCE = −30 V, IB = 0
VCE = −60 V, IB = 0
VEB = −5 V, IC = 0
−400
−400
−700
−700
−1
µA
µA
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
mA
*
hFE1
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = −3 A
VCE = −4 V, IC = −3 A
70
15
250
hFE2
VBE
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Turn-on time
−2.0
−1.5
V
V
VCE(sat) IC = −4 A, IB = −0.4 A
fT
ton
tstg
tf
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
20
0.2
0.5
0.2
MHz
µs
IC = −4 A,
Storage time
IB1 = − 0.4 A, IB2 = 0.4 A
VCC = −50 V
µs
Fall time
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
P
hFE1
70 to 150
120 to 250
Note) The part number in the parenthesis shows conventional part number.
SJD00012BED
Publication date: April 2003
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