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2SB0873 PDF预览

2SB0873

更新时间: 2024-02-26 08:48:06
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管开关
页数 文件大小 规格书
2页 40K
描述
Silicon PNP epitaxial planer type

2SB0873 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):180
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

2SB0873 数据手册

 浏览型号2SB0873的Datasheet PDF文件第2页 
Transistor  
2SB873  
Silicon PNP epitaxial planer type  
For low-frequency power amplification  
For DC-DC converter  
Unit: mm  
5.9±0.2  
4.9±0.2  
For stroboscope  
Features  
Low collector to emitter saturation voltage VCE(sat)  
.
Large collector current IC.  
0.7±0.1  
2.54±0.15  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
–30  
0.45+–0.21  
0.45+00..12  
–20  
V
1.27  
1.27  
–7  
V
1:Emitter  
2:Collector  
3:Base  
–10  
A
1
2
3
IC  
–5  
A
EIAJ:SC–51  
TO–92L Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–100  
–100  
Unit  
Collector cutoff current  
Emitter cutoff current  
VCB = –10V, IE = 0  
nA  
nA  
V
IEBO  
VEB = –5V, IC = 0  
Collector to emitter voltage  
Emitter to base voltage  
Forward current transfer ratio  
VCEO  
VEBO  
IC = –1mA, IB = 0  
–20  
–7  
IE = –10µA, IC = 0  
V
hFE  
VCE = –2V, IC = –2A*2  
IC = –3A, IB = –0.1A*2  
VCB = –6V, IE = 50mA, f = 200MHz  
VCB = –20V, IE = 0, f = 1MHz  
90  
625  
–1  
*1  
Collector to emitter saturation voltage VCE(sat)  
V
MHz  
pF  
Transition frequency  
fT  
120  
Collector output capacitance  
Cob  
85  
*2 Pulse measurement  
*1  
h
Rank classification  
FE  
Rank  
hFE  
P
Q
R
90 ~ 135  
120 ~ 205  
180 ~ 625  
1

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