Datasheet > 2SB0835S

2SB0835S

更新时间： 2024-01-22 01:58:02

品牌	Logo	应用领域
松下 - PANASONIC		放大器晶体管
页数	文件大小	规格书
3页	569K
描述
Small Signal Bipolar Transistor, 1A I(C), 18V V(BR)CEO, 1-Element, PNP, Silicon, SC-71, 3 PIN

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技术参数
数据手册

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2SB0835S 技术参数

生命周期：	Obsolete	零件包装代码：	SC-71
包装说明：	IN-LINE, R-PSIP-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	最大集电极电流 (IC)：	1 A
集电极-发射极最大电压：	18 V	配置：	SINGLE
最小直流电流增益 (hFE)：	180	JESD-30 代码：	R-PSIP-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	200 MHz	Base Number Matches：	1

2SB0835S 数据手册

Transistor

2SB0835 (2SB835)

Silicon PNP epitaxial planer type

For low-frequency output amplification

Unit: mm

6.9±0.1

2.5±0.1

1.5

1.5 R0.9

1.0

R0.9

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

0.55±0.1

0.45±0.05

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–20

–18

2.5

–5

–2

1:Base

I_C

–1

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= –10V, I_E= 0

min

typ

max

–1

Unit

µA

Collector cutoff current

I_CEO

V_CE= –18V, I_B= 0

–10

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

–20

–18

–5

I_C= –1mA, I_B= 0

I_E= –10µA, I_C= 0

h_FE1

V_CE= –2V, I_C= –0.5A

V_CE= –2V, I_C= –1.5A

I_C= –1A, I_B= –50mA

I_C= –500mA, I_B= –50mA

130

280

Forward current transfer ratio

h_FE2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.5

–1.2

Transition frequency

f_T

V_CB= –6V, I_E= 50mA, f = 200MHz

V_CB= –6V, I_E= 0, f = 1MHz

200

MHz

Collector output capacitance

C_ob

^*h_FE1Rank classification

Rank

h_FE1

130 ~ 210

180 ~ 280

Note.) The Part number in the Parenthesis shows conventional part number.

208

12 3

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