2SB0819

更新时间： 2024-02-25 19:14:15

品牌	Logo	应用领域
松下 - PANASONIC		/
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描述
For Low-Frequency Output Amplification

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2SB0819 数据手册

Transistors

2SB0819 (2SB819)

Silicon PNP epitaxial planar type

For low-frequency output amplification

Complementary to 2SD1051

Unit: mm

2.5 0.1

6.9 0.1

(1.5)

(1.0)

(1.5)

■ Features

R 0.9

• High collector-emitter voltage (Base open) V_CEO

• Large collctor power dissipation P_C

R 0.7

• M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

(0.85)

0.55 0.1

0.45 0.05

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

−50

−40

1: Base

(2.5) (2.5)

−5

2: Collector

3: Emitter

M-A1 Package

Collector current

I_C

I_CP

P_C

T_j

−1.5

Peak collector current

Collector power dissipation ^*

Junction temperature

Storage temperature

−3

°C

150

T_stg

−55 to +150

Note) : Print circuit board: Copper foil area of 1 cm²or more, and the board

thickness of 1.7 mm for the collector portion

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

I_C= −1 mA, I_E= 0

Min

−50

−40

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

I_C= −2 mA, I_B= 0

V_CB= −20 V, I_E= 0

V_CE= −10 V, I_B= 0

V_EB= −5 V, I_C= 0

V_CE= −5 V, I_C= −1 A

−1

−100

−10

220

−1

µA



I_CEO

I_EBO

1, 2

Forward current transfer ratio ^*

h_FE

Collector-emitter saturation voltage ^*

V_CE(sat)I_C= −1.5 A, I_B= − 0.15 A

V_BE(sat)I_C= −2 A, I_B= − 0.2 A

Base-emitter saturation voltage ^*

−1.5

Transition frequency

f_T

V_CB= −5 V, I_E= 0.5 A, f = 200 MHz

V_CB= −20 V, I_E= 0, f = 1 MHz

150

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classification

Rank

h_FE

80 to 160

120 to 220

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002

SJC00059BED

12 3 4

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