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2SB0789GQ PDF预览

2SB0789GQ

更新时间: 2024-02-07 17:56:37
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管光电二极管放大器
页数 文件大小 规格书
3页 82K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F2, 3 PIN

2SB0789GQ 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):130
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SB0789GQ 数据手册

 浏览型号2SB0789GQ的Datasheet PDF文件第2页浏览型号2SB0789GQ的Datasheet PDF文件第3页 
Transistors  
2SB0789, 2SB0789A (2SB789, 2SB789A)  
Silicon PNP epitaxial planar type  
Unit: mm  
For low-frequency driver amplification  
4.5 0.1  
1.6 0.2  
1.5 0.1  
Features  
High collector-emitter voltage (Base open) VCEO  
Large collector power dissipation PC  
3
1
2
0.4 0.08  
1.5 0.1  
0.5 0.08  
0.4 0.04  
Absolute Maximum Ratings Ta = 25°C  
3˚  
Parameter  
Symbol  
Rating  
100  
120  
100  
120  
5  
Unit  
2SB0789  
2SB0789A  
2SB0789  
2SB0789A  
VCBO  
V
45˚  
Collector-base voltage  
(Emitter open)  
3.0 0.15  
VCEO  
V
Collector-emitter voltage  
(Base open)  
1: Base  
2: Collector  
3: Emitter  
Emitter-base voltage (Collector open) VEBO  
V
A
MiniP3-F1 Package  
Collector current  
IC  
ICP  
PC  
Tj  
0.5  
1  
Marking Symbol:  
2SB0789: D  
2SB0789A: E  
Peak collector current  
Collector power dissipation *  
Junction temperature  
Storage temperature  
A
1
W
°C  
°C  
150  
Tstg  
55 to +150  
Note) : Print circuit board: Copper foil area of 1 cm2 or more, and the board  
*
thickness of 1.7 mm for the collector portion.  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
IC = −100 µA, IB = 0  
Min  
100  
120  
5  
Typ  
Max  
Unit  
2SB0789  
2SB0789A  
VCEO  
V
Collector-emitter voltage  
(Base open)  
Emitter-base voltage (Collector open)  
VEBO  
IE = −10 µA, IC = 0  
V
1
2
*
Forward current transfer ratio *  
hFE1  
hFE2  
VCE = −10 V, IC = −150 mA  
VCE = −5 V, IC = −500 mA  
90  
220  
50  
1
Collector-emitter saturation voltage *  
VCE(sat) IC = −500 mA, IB = −50 mA  
VBE(sat) IC = −500 mA, IB = −50 mA  
0.2 0.6  
0.85 1.20  
120  
V
V
1
Base-emitter saturation voltage *  
Transition frequency  
fT  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
30  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
Q
R
hFE1  
90 to 155  
130 to 220  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: December 2002  
SJC00056CED  
1

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