Transistors
2SB0789, 2SB0789A (2SB789, 2SB789A)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency driver amplification
4.5 0.1
1.6 0.2
1.5 0.1
■ Features
• High collector-emitter voltage (Base open) VCEO
• Large collector power dissipation PC
3
1
2
0.4 0.08
1.5 0.1
0.5 0.08
0.4 0.04
■ Absolute Maximum Ratings Ta = 25°C
3˚
Parameter
Symbol
Rating
−100
−120
−100
−120
−5
Unit
2SB0789
2SB0789A
2SB0789
2SB0789A
VCBO
V
45˚
Collector-base voltage
(Emitter open)
3.0 0.15
VCEO
V
Collector-emitter voltage
(Base open)
1: Base
2: Collector
3: Emitter
Emitter-base voltage (Collector open) VEBO
V
A
MiniP3-F1 Package
Collector current
IC
ICP
PC
Tj
− 0.5
−1
Marking Symbol:
• 2SB0789: D
• 2SB0789A: E
Peak collector current
Collector power dissipation *
Junction temperature
Storage temperature
A
1
W
°C
°C
150
Tstg
−55 to +150
Note) : Print circuit board: Copper foil area of 1 cm2 or more, and the board
*
thickness of 1.7 mm for the collector portion.
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
Conditions
IC = −100 µA, IB = 0
Min
−100
−120
−5
Typ
Max
Unit
2SB0789
2SB0789A
VCEO
V
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
V
1
2
*
Forward current transfer ratio *
hFE1
hFE2
VCE = −10 V, IC = −150 mA
VCE = −5 V, IC = −500 mA
90
220
50
1
Collector-emitter saturation voltage *
VCE(sat) IC = −500 mA, IB = −50 mA
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.6
− 0.85 −1.20
120
V
V
1
Base-emitter saturation voltage *
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
30
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
hFE1
90 to 155
130 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2002
SJC00056CED
1