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2SB0779 PDF预览

2SB0779

更新时间: 2024-02-25 07:40:52
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 68K
描述
For low-frequency output amplification

2SB0779 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):130
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2SB0779 数据手册

 浏览型号2SB0779的Datasheet PDF文件第2页浏览型号2SB0779的Datasheet PDF文件第3页 
Transistors  
2SB0779 (2SB779)  
Silicon PNP epitaxial planar type  
Unit: mm  
For low-frequency output amplification  
+0.10  
–0.05  
0.40  
+0.10  
–0.06  
0.16  
3
Features  
Low collector-emitter saturation voltage VCE(sat)  
Satisfactory linearity of forward current transfer ratio hFE at the  
low collector voltage  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
(0.95) (0.95)  
1.9 0.1  
+0.20  
2.90  
–0.05  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
25  
Unit  
V
1: Base  
2: Emitter  
3: Collector  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
20  
V
EIAJ: SC-59  
Mini3-G1 Package  
7  
V
Marking Symbol: 1A  
Collector current  
IC  
ICP  
PC  
Tj  
500  
1  
mA  
A
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
200  
mW  
°C  
°C  
150  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
25  
20  
7  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
IC = −10 µA, IE = 0  
IC = −1 mA, IB = 0  
V
IE = −10 µA, IC = 0  
VCB = −25 V, IE = 0  
VCE = −20 V, IB = 0  
VCE = −2 V, IC = −500 mA  
VCE = −2 V, IC = −1 A  
V
100  
1  
nA  
µA  
ICEO  
1
2
Forward current transfer ratio *  
hFE1  
hFE2  
90  
25  
220  
*
1
Collector-emitter saturation voltage *  
VCE(sat) IC = −500 mA, IB = −50 mA  
VBE(sat) IC = −500 mA, IB = −50 mA  
0.2 0.4  
V
1
Base-emitter saturation voltage *  
1.2  
V
Transition frequency  
fT  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
150  
15  
MHz  
pF  
Collector output capacitance  
Cob  
(Common-emitter reverse transfer)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
Q
R
hFE1  
90 to 155  
130 to 220  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: March 2003  
SJC00054BED  
1

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