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2SB0766G-R PDF预览

2SB0766G-R

更新时间: 2024-02-13 04:17:12
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 42K
描述
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F2, 3 PIN

2SB0766G-R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):170
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SB0766G-R 数据手册

 浏览型号2SB0766G-R的Datasheet PDF文件第2页 
Transistor  
2SB766, 2SB766A  
Silicon PNP epitaxial planer type  
For low-frequency output amplification  
Unit: mm  
Complementary to 2SD874 and 2SD874A  
Features  
Large collector power dissipation PC.  
1.5±0.1  
4.5±0.1  
1.6±0.2  
Mini Power type package, allowing downsizing of the equipment  
and automatic insertion through the tape packing and the maga-  
zine packing.  
45°  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
Ratings  
Unit  
0.4±0.08  
0.4±0.04  
0.5±0.08  
1.5±0.1  
Collector to  
base voltage  
Collector to  
2SB766  
–30  
–60  
VCBO  
V
3.0±0.15  
2SB766A  
2SB766  
3
2
1
–25  
VCEO  
V
emitter voltage 2SB766A  
Emitter to base voltage  
Peak collector current  
Collector current  
–50  
marking  
VEBO  
ICP  
–5  
V
A
–1.5  
–1  
IC  
A
1:Base  
*
2:Collector  
3:Emitter  
EIAJ:SC–62  
Mini Power Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
Tj  
150  
(2SB766)  
Tstg  
–55 ~ +150  
Marking symbol : A  
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
*
(2SB766A)  
B
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
VCB = –20V, IE = 0  
min  
typ  
max  
Unit  
Collector cutoff current  
– 0.1  
µA  
Collector to base  
voltage  
2SB766  
2SB766A  
–30  
–60  
–25  
–50  
–5  
VCBO  
IC = –10µA, IE = 0  
V
Collector to emitter 2SB766  
VCEO  
VEBO  
IC = –2mA, IB = 0  
V
V
voltage  
2SB766A  
Emitter to base voltage  
IE = –10µA, IC = 0  
VCE = –10V, IC = –500mA*2  
VCE = –5V, IC = –1A*2  
85  
340  
*1  
hFE1  
hFE2  
Forward current transfer ratio  
50  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = –500mA, IB = –50mA*2  
IC = –500mA, IB = –50mA*2  
VCB = –10V, IE = 50mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
– 0.2  
– 0.4  
–1.2  
V
V
– 0.85  
200  
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
20  
30  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
Q
R
S
85 ~ 170  
AQ  
120 ~ 240  
AR  
170 ~ 340  
AS  
2SB766  
Marking  
Symbol  
2SB766A  
BQ  
BR  
BS  
1

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