Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SD661 and 2SD661A
Unit: mm
6.9±0.1
2.5±0.1
1.5
Features
Low noise voltage NV.
■
1.5 R0.9
1.0
R0.9
●
●
High foward current transfer ratio hFE
.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R0.7
0.85
Absolute Maximum Ratings (Ta=25˚C)
■
0.55±0.1
0.45±0.05
Parameter
Symbol
Ratings
–35
Unit
Collector to
2SB745
2SB745A
2SB745
3
2
1
VCBO
V
base voltage
Collector to
–55
–35
VCEO
V
2.5
2.5
emitter voltage 2SB745A
Emitter to base voltage
Peak collector current
Collector current
–55
VEBO
ICP
IC
–5
V
mA
mA
mW
˚C
1:Base
–200
–50
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Collector power dissipation
Junction temperature
Storage temperature
PC
400
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
–100
–1
Unit
nA
VCB = –10V, IE = 0
Collector cutoff current
ICEO
VCE = –10V, IB = 0
µA
Collector to base
voltage
2SB745
2SB745A
–35
–55
–35
–55
–5
VCBO
IC = –10µA, IE = 0
V
Collector to emitter 2SB745
VCEO
VEBO
IC = –2mA, IB = 0
V
V
voltage
2SB745A
Emitter to base voltage
IE = –10µA, IC = 0
*
Forward current transfer ratio
hFE
VCB = –5V, IE = 2mA
IC = –100mA, IB = –10mA
VCE = –1V, IC = –100mA
180
700
– 0.6
–1
Collector to emitter saturation voltage VCE(sat)
V
V
Base to emitter voltage
Transition frequency
VBE
fT
– 0.7
150
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
MHz
Noise voltage
NV
150
mV
*hFE Rank classification
Rank
hFE
R
S
T
180 ~ 360
260 ~ 520
360 ~ 700
1