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2SB0745 PDF预览

2SB0745

更新时间: 2024-01-21 21:54:03
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松下 - PANASONIC /
页数 文件大小 规格书
3页 53K
描述
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

2SB0745 数据手册

 浏览型号2SB0745的Datasheet PDF文件第2页浏览型号2SB0745的Datasheet PDF文件第3页 
Transistor  
2SB745, 2SB745A  
Silicon PNP epitaxial planer type  
For low-frequency and low-noise amplification  
Complementary to 2SD661 and 2SD661A  
Unit: mm  
6.9±0.1  
2.5±0.1  
1.5  
Features  
Low noise voltage NV.  
1.5 R0.9  
1.0  
R0.9  
High foward current transfer ratio hFE  
.
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
R0.7  
0.85  
Absolute Maximum Ratings (Ta=25˚C)  
0.55±0.1  
0.45±0.05  
Parameter  
Symbol  
Ratings  
–35  
Unit  
Collector to  
2SB745  
2SB745A  
2SB745  
3
2
1
VCBO  
V
base voltage  
Collector to  
–55  
–35  
VCEO  
V
2.5  
2.5  
emitter voltage 2SB745A  
Emitter to base voltage  
Peak collector current  
Collector current  
–55  
VEBO  
ICP  
IC  
–5  
V
mA  
mA  
mW  
˚C  
1:Base  
–200  
–50  
2:Collector  
3:Emitter  
EIAJ:SC–71  
M Type Mold Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–100  
–1  
Unit  
nA  
VCB = –10V, IE = 0  
Collector cutoff current  
ICEO  
VCE = –10V, IB = 0  
µA  
Collector to base  
voltage  
2SB745  
2SB745A  
–35  
–55  
–35  
–55  
–5  
VCBO  
IC = –10µA, IE = 0  
V
Collector to emitter 2SB745  
VCEO  
VEBO  
IC = –2mA, IB = 0  
V
V
voltage  
2SB745A  
Emitter to base voltage  
IE = –10µA, IC = 0  
*
Forward current transfer ratio  
hFE  
VCB = –5V, IE = 2mA  
IC = –100mA, IB = –10mA  
VCE = –1V, IC = –100mA  
180  
700  
– 0.6  
–1  
Collector to emitter saturation voltage VCE(sat)  
V
V
Base to emitter voltage  
Transition frequency  
VBE  
fT  
– 0.7  
150  
VCB = –5V, IE = 2mA, f = 200MHz  
VCE = –10V, IC = –1mA, GV = 80dB  
Rg = 100k, Function = FLAT  
MHz  
Noise voltage  
NV  
150  
mV  
*hFE Rank classification  
Rank  
hFE  
R
S
T
180 ~ 360  
260 ~ 520  
360 ~ 700  
1

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