5秒后页面跳转
2SB0710A PDF预览

2SB0710A

更新时间: 2024-02-06 19:47:03
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管光电二极管放大器
页数 文件大小 规格书
2页 64K
描述
Silicon PNP epitaxial planer type

2SB0710A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):170
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SB0710A 数据手册

 浏览型号2SB0710A的Datasheet PDF文件第2页 
Transistors  
2SB0710, 2SB0710A  
Silicon PNP epitaxial planer type  
Unit: mm  
+0.10  
–0.05  
0.40  
3
For general amplification  
+0.10  
0.16  
–0.06  
Complementary to 2SD0602 and 2SD0602A  
I Features  
Large collector current IC  
1
2
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
(0.95) (0.95)  
1.9 0.1  
+0.20  
2.90  
–0.05  
10°  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
30  
Unit  
2SB0710  
2SB0710A  
2SB0710  
2SB0710A  
VCBO  
V
Collector to  
base voltage  
60  
VCEO  
25  
V
Collector to  
1: Base  
2: Emitter  
3: Collector  
JEDEC: TO-236  
EIAJ: SC-59  
Mini Type Package  
emitter voltage  
50  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
5  
V
A
Marking Symbol  
2SB0710 : C  
2SB0710A : D  
1  
500  
200  
mA  
mW  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
Tj  
150  
Tstg  
55 to +150  
°C  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
Unit  
µA  
V
Collector cutoff current  
VCB = −20 V, IE = 0  
IC = −10 µA, IE = 0  
0.1  
2SB0710  
2SB0710A  
2SB0710  
2SB0710A  
VCBO  
30  
60  
25  
50  
5  
Collector to  
base voltage  
VCEO  
IC = −10 mA, IB = 0  
V
V
Collector to  
emitter voltage  
Emitter to base voltage  
VEBO  
IE = −10 µA, IC = 0  
1
2
*
Forward current transfer ratio *  
hFE1  
hFE2  
VCE = −10 V, IC = −150 mA  
VCE = −10 V, IC = −500 mA  
IC = −300 mA, IB = −30 mA  
IC = −300 mA, IB = −30 mA  
85  
340  
40  
1
Collector to emitter saturation voltage *  
Base to emitter saturation voltage *  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
0.35 0.6  
V
V
1
1.1  
200  
6
1.5  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
15  
Note) 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
Q
R
120 to 240  
CR  
S
170 to 340  
CS  
No-rank  
hFE1  
85 to 170  
CQ  
85 to 340  
Product of no-rank is not classi-  
fied and have no indication for  
rank.  
2SB0710  
C
D
Marking  
symbol  
2SB0710A  
DQ  
DR  
DS  
1

与2SB0710A相关器件

型号 品牌 描述 获取价格 数据表
2SB0710A(2SB710A) ETC 小信号デバイス - 小信号トランジスタ - 汎用低周波増幅

获取价格

2SB0710A|2SB710A PANASONIC Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

获取价格

2SB0710AQ ETC TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-236

获取价格

2SB0710AR ETC TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-236

获取价格

2SB0710AS ETC TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-236

获取价格

2SB0710Q ETC TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 500MA I(C) | TO-236

获取价格