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2SB0642 PDF预览

2SB0642

更新时间: 2024-02-16 10:02:36
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管放大器
页数 文件大小 规格书
4页 88K
描述
Silicon PNP epitaxial planar type

2SB0642 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):290
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SB0642 数据手册

 浏览型号2SB0642的Datasheet PDF文件第2页浏览型号2SB0642的Datasheet PDF文件第3页浏览型号2SB0642的Datasheet PDF文件第4页 
Transistors  
2SB0642 (2SB642)  
Silicon PNP epitaxial planar type  
For low-power general amplification  
Unit: mm  
2.5 0.1  
6.9 0.1  
(1.5)  
(1.0)  
(1.5)  
Features  
High forward current transfer ratio hFE  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
R 0.9  
R 0.7  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
60  
Unit  
V
(0.85)  
0.55 0.1  
0.45 0.05  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
50  
V
7  
V
3
2
1
Collector current  
IC  
ICP  
PC  
Tj  
100  
200  
400  
mA  
mA  
mW  
°C  
1: Base  
2: Collector  
3: Emitter  
(2.5) (2.5)  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
M-A1 Package  
150  
Tstg  
55 to +150  
°C  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
60  
50  
7  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage  
Transition frequency  
IC = −10 µA, IE = 0  
IC = −2 mA, IB = 0  
V
IE = −10 µA, IC = 0  
VCB = −20 V, IE = 0  
VCE = −20 V, IB = 0  
VCE = 10 V, IC = 2 mA  
V
1  
1  
µA  
µA  
ICEO  
hFE  
160  
460  
1  
VCE(sat) IC = −100 mA, IB = −10 mA  
V
fT  
VCB = −10 V, IE = 2 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
80  
MHz  
pF  
Collector output capacitance  
Cob  
3.5  
(Common-emitter reverse transfer)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
S
hFE1  
160 to 260  
210 to 340  
290 to 460  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: January 2003  
SJC00045BED  
1

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