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2SB0621 PDF预览

2SB0621

更新时间: 2024-01-18 22:41:58
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 50K
描述
Silicon PNP epitaxial planer type

2SB0621 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.82Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):170
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SB0621 数据手册

 浏览型号2SB0621的Datasheet PDF文件第2页浏览型号2SB0621的Datasheet PDF文件第3页 
Transistor  
2SB621, 2SB621A  
Silicon PNP epitaxial planer type  
For low-frequency output amplification  
Unit: mm  
4.0±0.2  
Complementary to 2SD592 and 2SD592A  
5.0±0.2  
Features  
Low collector to emitter saturation voltage VCE(sat)  
.
High transition frequency fT.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
Ratings  
–30  
Unit  
Collector to  
2SB621  
2SB621A  
2SB621  
VCBO  
V
0.45+00..12  
0.45+00..12  
base voltage  
Collector to  
–60  
–25  
1.27  
1.27  
VCEO  
V
emitter voltage 2SB621A  
Emitter to base voltage  
Peak collector current  
Collector current  
–50  
VEBO  
ICP  
IC  
–5  
V
A
1 2 3  
1:Emitter  
–1.5  
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
–1  
A
2.54±0.15  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
750  
mW  
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = –20V, IE = 0  
– 0.1  
µA  
Collector to base  
voltage  
2SB621  
2SB621A  
–30  
–60  
–25  
–50  
–5  
VCBO  
IC = –10µA, IE = 0  
V
Collector to emitter 2SB621  
VCEO  
VEBO  
IC = –2mA, IB = 0  
V
V
voltage  
2SB621A  
Emitter to base voltage  
IE = –10µA, IC = 0  
*
hFE1  
VCE = –10V, IC = –500mA  
VCE = –5V, IC = –1A  
85  
340  
Forward current transfer ratio  
hFE2  
50  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = –500mA, IB = –50mA  
IC = –500mA, IB = –50mA  
VCB = –10V, IE = 50mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
– 0.2  
– 0.85  
200  
–0.4  
–1.2  
V
V
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
20  
30  
*hFE1 Rank classification  
Rank  
hFE1  
Q
R
S
85 ~ 170  
120 ~ 240  
170 ~ 340  
1

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