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2SA794

更新时间: 2024-02-10 04:52:33
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
4页 95K
描述
Silicon PNP epitaxial planar type

2SA794 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):185
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):1.2 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

2SA794 数据手册

 浏览型号2SA794的Datasheet PDF文件第2页浏览型号2SA794的Datasheet PDF文件第3页浏览型号2SA794的Datasheet PDF文件第4页 
Power Transistors  
2SA0794 (2SA794), 2SA0794A (2SA794A)  
Silicon PNP epitaxial planar type  
For low-frequency output driver  
Unit: mm  
+0.5  
–0.1  
8.0  
3.2 0.2  
Complementary to 2SC1567, 2SC1567A  
φ 3.16 0.1  
Features  
High collector-emitter voltage (Base open) VCEO  
Optimum for the driver stage of low-frequency and 40 W to 100 W  
output amplifier  
TO-126B package which requires no insulation plate for installa-  
tion to the heat sink  
Absolute Maximum Ratings Ta = 25°C  
0.75 0.1  
4.6 0.2  
0.5 0.1  
2.3 0.2  
Parameter  
Symbol  
Rating  
100  
120  
100  
120  
5  
Unit  
0.5 0.1  
1.76 0.1  
2SA0794  
2SA0794A  
2SA0794  
2SA0794A  
VCBO  
V
Collector-base voltage  
(Emitter open)  
1: Emitter  
2: Collector  
3: Base  
1
2
3
VCEO  
V
Collector-emitter voltage  
(Base open)  
TO-126B-A1 Package  
Emitter-base voltage (Collector open) VEBO  
V
A
Collector current  
IC  
ICP  
PC  
Tj  
0.5  
1  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
A
1.2  
W
°C  
°C  
150  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
100  
120  
5  
Typ  
Max  
Unit  
2SA0794  
VCEO  
IC = −100 µA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
2SA0794A  
Emitter-base voltage (Collector open)  
Forward current transfer ratio  
VEBO  
IE = −1 µA, IC = 0  
V
*
hFE1  
VCE = −10 V, IC = −150 mA  
VCE = −5 V, IC = −500 mA  
90  
220  
hFE2  
50  
100  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = −500 mA, IB = −50 mA  
VBE(sat) IC = −500 mA, IB = −50 mA  
0.2 0.4  
0.85 1.20  
120  
V
V
fT  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
20  
30  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
hFE1  
90 to 155  
130 to 220  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: February 2003  
SJD00001BED  
1

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