Power Transistors
2SA0794 (2SA794), 2SA0794A (2SA794A)
Silicon PNP epitaxial planar type
For low-frequency output driver
Unit: mm
+0.5
–0.1
8.0
3.2 0.2
Complementary to 2SC1567, 2SC1567A
φ 3.16 0.1
■ Features
• High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings Ta = 25°C
0.75 0.1
4.6 0.2
0.5 0.1
2.3 0.2
Parameter
Symbol
Rating
−100
−120
−100
−120
−5
Unit
0.5 0.1
1.76 0.1
2SA0794
2SA0794A
2SA0794
2SA0794A
VCBO
V
Collector-base voltage
(Emitter open)
1: Emitter
2: Collector
3: Base
1
2
3
VCEO
V
Collector-emitter voltage
(Base open)
TO-126B-A1 Package
Emitter-base voltage (Collector open) VEBO
V
A
Collector current
IC
ICP
PC
Tj
− 0.5
−1
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
A
1.2
W
°C
°C
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
Conditions
Min
−100
−120
−5
Typ
Max
Unit
2SA0794
VCEO
IC = −100 µA, IB = 0
V
Collector-emitter voltage
(Base open)
2SA0794A
Emitter-base voltage (Collector open)
Forward current transfer ratio
VEBO
IE = −1 µA, IC = 0
V
*
hFE1
VCE = −10 V, IC = −150 mA
VCE = −5 V, IC = −500 mA
90
220
hFE2
50
100
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = −500 mA, IB = −50 mA
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.4
− 0.85 −1.20
120
V
V
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
20
30
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
hFE1
90 to 155
130 to 220
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00001BED
1