2SA720AR

更新时间： 2024-02-16 10:25:33

品牌	Logo	应用领域
松下 - PANASONIC		驱动
页数	文件大小	规格书
3页	50K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN

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技术参数
数据手册

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2SA720AR 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.7	Base Number Matches：	1

2SA720AR 数据手册

Transistor

2SA719, 2SA720

Silicon PNP epitaxial planer type

For low-frequency power amplification and driver amplification

Complementary to 2SC1317 and 2SC1318

Unit: mm

4.0±0.2

5.0±0.2

Features

■

●

Complementary pair with 2SC1317 and 2SC1318.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

–30

Unit

Collector to

2SA719

2SA720

2SA719

V_CBO

0.45–⁺0⁰.^.1²

base voltage

Collector to

–60

1.27

–25

V_CEO

emitter voltage 2SA720

Emitter to base voltage

Peak collector current

Collector current

–50

V_EBO

I_CP

I_C

–5

1 2 3

1:Emitter

–1

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

2.54±0.15

–500

625

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

– 0.1

Unit

Collector cutoff current

Collector to base

voltage

V_CB= –20V, I_E= 0

µA

2SA719

2SA720

2SA719

2SA720

–30

–60

–25

–50

–5

V_CBO

I_C= –10µA, I_E= 0

Collector to emitter

voltage

V_CEO

V_EBO

I_C= –10mA, I_B= 0

Emitter to base voltage

I_E= –10µA, I_C= 0

h_FE1

V_CE= –10V, I_C= –150mA

V_CE= –10V, I_C= –500mA

I_C= –300mA, I_B= –30mA

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

340

Forward current transfer ratio

h_FE2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.35

–1.1

200

– 0.6

–1.5

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*h_FE1Rank classification

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

12 3

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