Transistors
2SA0720A (2SA720A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1318A
Unit: mm
5.0 0.2
4.0 0.2
■ Features
• High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
0.7 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−80
Unit
V
+0.15
+0.15
0.45
0.45
–0.1
–0.1
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
+0.6
+0.6
2.5
–0.2
2.5
–0.2
−70
V
1: Emitter
2: Collector
3: Base
1
2 3
−5
V
Collector current
IC
ICP
PC
Tj
− 0.5
−1
A
EIAJ: SC-43A
TO-92-B1 Package
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
A
625
mW
°C
°C
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−80
−70
−5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
V
VCB = −20 V, IE = 0
− 0.1
µA
V
1
2
Forward current transfer ratio *
hFE1
hFE2
VCE = −10 V, IC = −150 mA
VCE = −10 V, IC = −500 mA
85
40
240
*
1
Collector-emitter saturation voltage *
VCE(sat) IC = −300 mA, IB = −30 mA
VBE(sat) IC = −300 mA, IB = −30 mA
− 0.2 − 0.6
− 0.85 −1.50
120
1
Base-emitter saturation voltage *
V
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
20
30
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurment
*
2: Rank classification
*
Rank
Q
R
hFE1
85 to 170
120 to 240
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJC00003BED
1