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2SA720A PDF预览

2SA720A

更新时间: 2024-01-14 02:39:43
品牌 Logo 应用领域
松下 - PANASONIC 驱动器
页数 文件大小 规格书
3页 72K
描述
For low-frequency driver amplification Complementary

2SA720A 数据手册

 浏览型号2SA720A的Datasheet PDF文件第2页浏览型号2SA720A的Datasheet PDF文件第3页 
Transistors  
2SA0720A (2SA720A)  
Silicon PNP epitaxial planar type  
For low-frequency driver amplification  
Complementary to 2SC1318A  
Unit: mm  
5.0 0.2  
4.0 0.2  
Features  
High collector-emitter voltage (Base open) VCEO  
Optimum for the driver stage of a low-frequency and 25 W to 30  
W output amplifier  
0.7 0.1  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
80  
Unit  
V
+0.15  
+0.15  
0.45  
0.45  
–0.1  
–0.1  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
+0.6  
+0.6  
2.5  
–0.2  
2.5  
–0.2  
70  
V
1: Emitter  
2: Collector  
3: Base  
1
2 3  
5  
V
Collector current  
IC  
ICP  
PC  
Tj  
0.5  
1  
A
EIAJ: SC-43A  
TO-92-B1 Package  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
A
625  
mW  
°C  
°C  
150  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
80  
70  
5  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
IC = −10 µA, IE = 0  
IC = −2 mA, IB = 0  
V
IE = −10 µA, IC = 0  
V
VCB = −20 V, IE = 0  
0.1  
µA  
V
1
2
Forward current transfer ratio *  
hFE1  
hFE2  
VCE = −10 V, IC = −150 mA  
VCE = −10 V, IC = −500 mA  
85  
40  
240  
*
1
Collector-emitter saturation voltage *  
VCE(sat) IC = −300 mA, IB = −30 mA  
VBE(sat) IC = −300 mA, IB = −30 mA  
0.2 0.6  
0.85 1.50  
120  
1
Base-emitter saturation voltage *  
V
Transition frequency  
fT  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
20  
30  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurment  
*
2: Rank classification  
*
Rank  
Q
R
hFE1  
85 to 170  
120 to 240  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: March 2003  
SJC00003BED  
1

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