2SA720

更新时间： 2024-01-08 18:44:31

品牌	Logo	应用领域
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描述
For low-frequency power amplification and driver amplification Complementary

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技术参数
数据手册

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2SA720 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.7	Base Number Matches：	1

2SA720 数据手册

Transistors

2SA0719, 2SA0720 (2SA719, 2SA720)

Silicon PNP epitaxial planar type

For low-frequency power amplification and driver amplification

Unit: mm

Complementary to 2SC1317, 2SC1318

5.0 0.2

4.0 0.2

■ Features

• Complementary pair with 2SC1317 and 2SC1318

0.7 0.1

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−30

Unit

2SA0719

2SA0720

2SA0719

2SA0720

V_CBO

Collector-base voltage

(Emitter open)

+0.15

–0.1

+0.15

−60

0.45

–0.1

+0.6

2.5

–0.2

V_CEO

−25

2.5

Collector-emitter voltage

(Base open)

–0.2

−50

1: Emitter

2 3

2: Collector

3: Base

EIAJ: SC-43A

Emitter-base voltage (Collector open) V_EBO

−5

Collector current

I_C

I_CP

P_C

T_j

−500

−1

TO-92-B1 Package

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

625

°C

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

2SA0719

2SA0720

2SA0719

2SA0720

V_CBO

I_C= −10 µA, I_E= 0

−30

−60

−25

−50

−5

Collector-base voltage

(Emitter open)

V_CEO

I_C= −10 mA, I_B= 0

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

V_EBO

I_CBO

I_E= −10 µA, I_C= 0

µA



V_CB= −20 V, I_E= 0

− 0.1

h_FE1

V_CE= −10 V, I_C= −150 mA

V_CE= −10 V, I_C= −500 mA

340

h_FE2



Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −300 mA, I_B= −30 mA

V_BE(sat)I_C= −300 mA, I_B= −30 mA

− 0.35 − 0.60

−1.1

200

−1.5

f_T

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

85 to 170

120 to 240

170 to 340

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2003

SJC00002CED

12 3 4

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