Transistor
2SA683, 2SA684
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
Unit: mm
5.9±0.2
4.9±0.2
Features
■
●
Complementary pair with 2SC1383 and 2SC1384.
●
Allowing supply with the radial taping.
0.7±0.1
Absolute Maximum Ratings (Ta=25˚C)
■
2.54±0.15
Parameter
Symbol
Ratings
Unit
Collector to
2SA683
2SA684
2SA683
–30
–60
VCBO
V
base voltage
Collector to
–25
VCEO
V
0.45+–0.21
0.45+–00..12
emitter voltage 2SA684
Emitter to base voltage
Peak collector current
Collector current
–50
1.27
1.27
VEBO
ICP
IC
–5
V
A
1:Emitter
–1.5
–1
2:Collector
3:Base
1
2
3
A
EIAJ:SC–51
TO–92L Package
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
Collector to base
voltage
VCB = –20V, IE = 0
– 0.1
µA
2SA683
2SA684
2SA683
2SA684
–30
–60
–25
–50
–5
VCBO
IC = –10µA, IE = 0
V
Collector to emitter
voltage
VCEO
VEBO
IC = –2mA, IB = 0
V
V
Emitter to base voltage
IE = –10µA, IC = 0
*
hFE1
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
85
340
Forward current transfer ratio
hFE2
50
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
– 0.2
– 0.85
200
– 0.4
–1.2
V
V
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
20
30
*hFE1 Rank classification
Rank
hFE1
Q
R
S
85 ~ 170
120 ~ 240
170 ~ 340
1