5秒后页面跳转
2SA683S PDF预览

2SA683S

更新时间: 2024-02-16 21:59:17
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 50K
描述
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, SC-51, TO-92L-A1, 3 PIN

2SA683S 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

2SA683S 数据手册

 浏览型号2SA683S的Datasheet PDF文件第2页浏览型号2SA683S的Datasheet PDF文件第3页 
Transistor  
2SA683, 2SA684  
Silicon PNP epitaxial planer type  
For low-frequency power amplification and driver amplification  
Complementary to 2SC1383 and 2SC1384  
Unit: mm  
5.9±0.2  
4.9±0.2  
Features  
Complementary pair with 2SC1383 and 2SC1384.  
Allowing supply with the radial taping.  
0.7±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
2.54±0.15  
Parameter  
Symbol  
Ratings  
Unit  
Collector to  
2SA683  
2SA684  
2SA683  
–30  
–60  
VCBO  
V
base voltage  
Collector to  
–25  
VCEO  
V
0.45+–0.21  
0.45+00..12  
emitter voltage 2SA684  
Emitter to base voltage  
Peak collector current  
Collector current  
–50  
1.27  
1.27  
VEBO  
ICP  
IC  
–5  
V
A
1:Emitter  
–1.5  
–1  
2:Collector  
3:Base  
1
2
3
A
EIAJ:SC–51  
TO–92L Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
Collector to base  
voltage  
VCB = –20V, IE = 0  
– 0.1  
µA  
2SA683  
2SA684  
2SA683  
2SA684  
–30  
–60  
–25  
–50  
–5  
VCBO  
IC = –10µA, IE = 0  
V
Collector to emitter  
voltage  
VCEO  
VEBO  
IC = –2mA, IB = 0  
V
V
Emitter to base voltage  
IE = –10µA, IC = 0  
*
hFE1  
VCE = –10V, IC = –500mA  
VCE = –5V, IC = –1A  
85  
340  
Forward current transfer ratio  
hFE2  
50  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = –500mA, IB = –50mA  
IC = –500mA, IB = –50mA  
VCB = –10V, IE = 50mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
– 0.2  
– 0.85  
200  
– 0.4  
–1.2  
V
V
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
20  
30  
*hFE1 Rank classification  
Rank  
hFE1  
Q
R
S
85 ~ 170  
120 ~ 240  
170 ~ 340  
1

与2SA683S相关器件

型号 品牌 描述 获取价格 数据表
2SA684 SECOS PNP Transistor

获取价格

2SA684 DAYA TO-92 Plastic-Encapsulate Transistors

获取价格

2SA684 MCC PNP Epitaxial Silicon Transistor

获取价格

2SA684 PANASONIC Silicon PNP epitaxial planer type

获取价格

2SA684 UTC PNP EPITAXIAL PLANAR TRANSISTOR

获取价格

2SA684 LGE 双极型晶体管

获取价格